是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-270 |
包装说明: | ROHS COMPLIANT, PLASTIC, CASE 1487-05, WB-4 GULL, 4 PIN | 针数: | 2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.67 |
外壳连接: | SOURCE | 配置: | COMMON SOURCE, 2 ELEMENTS |
最小漏源击穿电压: | 70 V | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | ULTRA HIGH FREQUENCY BAND | JEDEC-95代码: | TO-270 |
JESD-30 代码: | R-PDFM-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 3 | 元件数量: | 2 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 225 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRF8P9040N | NXP |
获取价格 |
N-Channel Enhancement-Mode Lateral MOSFET | |
MRF8P9040NBR1 | NXP |
获取价格 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, ROHS COMPLIANT, PLASTIC, CAS | |
MRF8P9040NR1 | NXP |
获取价格 |
N-Channel Enhancement-Mode Lateral MOSFET | |
MRF8P9300HR6 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
MRF8P9300HR6_10 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs | |
MRF8P9300HSR6 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
MRF8S18120HR3 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
MRF8S18120HR3_10 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs | |
MRF8S18120HR5 | NXP |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-502A | |
MRF8S18120HSR3 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |