Document Number: MRF8P20165WH
Rev. 0, 4/2011
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P20165WHR3
MRF8P20165WHSR3
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 1880 to 2025 MHz.
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Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
1930--1995 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
G
(dB)
η
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
D
LATERAL N--CHANNEL
RF POWER MOSFETs
Frequency
1930 MHz
1960 MHz
1995 MHz
16.1
16.3
16.3
47.0
47.7
46.0
7.1
7.1
7.0
--27.7
--29.7
--33.3
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•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW
Output Power (2 dB Input Overdrive from Rated Pout
Typical Pout @ 3 dB Compression Point ≃ 190 Watts (1)
)
Features
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
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•
•
•
•
Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 100 MHz.
Designed for Wideband Applications that Require 65 MHz Signal Bandwidth
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
MRF8P20165WHR3
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Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20165WHSR3
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NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Symbol
Value
--0.5, +65
--6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
°C
RF /V
inB GSB
RF /V
outB DSB
V
DSS
Gate--Source Voltage
V
V
GS
DD
Operating Voltage
(Top View)
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
--65 to +150
125
T
C
°C
Figure 1. Pin Connections
(2)
T
J
225
°C
Table 2. Thermal Characteristics
(3)
Characteristic
Symbol
Value
Unit
°C/W
Thermal Resistance, Junction to Case
R
θ
JC
Case Temperature 80°C, 37 W CW, 28 Vdc, I
Case Temperature 114°C, 160 W CW, 28 Vdc, I
= 550 mA, V
= 1.3 Vdc, 1960 MHz
GSB
0.79
0.53
DQA
= 550 mA, V
= 1.3 Vdc, 1960 MHz
DQA
GSB
1. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
1