Datasheet > MRF8P26080HSR3

MRF8P26080HSR3

更新时间： 2024-09-26 10:47:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
14页	563K
描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF8P26080HSR3 数据手册

Document Number: MRF8P26080H

Rev. 0, 12/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF8P26080HR3

MRF8P26080HSR3

Designed for W--CDMA and LTE base station applications with frequencies

from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical

cellular base station modulation formats.

•

Typical Doherty Single--Carrier W--CDMA Characterization Performance:

_DD= 28 Volts, I_DQA= 300 mA, V_GSB= 1.3 Vdc, P_out= 14 Watts Avg., IQ

2500--2700 MHz, 14 W AVG., 28 V

W--CDMA, LTE

Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR =

7.5 dB @ 0.01% Probability on CCDF.

LATERAL N--CHANNEL

RF POWER MOSFETs

Output PAR

(dB)

ACPR

(dBc)

Frequency

2570 MHz

2595 MHz

2620 MHz

(dB)

15.4

15.2

15.0

(%)

39.1

38.2

36.9

6.8

--33.6

--36.0

--40.0

CASE 465M--01, STYLE 1

N I -- 7 8 0 -- 4

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out

Typical P_out@ 3 dB Compression Point ≃ 83 Watts CW

)

MRF8P26080HR3

Features

•

Production Tested in a Symmetrical Doherty Configuration

100% PAR Tested for Guaranteed Output Power Capability

CASE 465H--02, STYLE 1

NI--780S--4

Characterized with Large--Signal Load--Pull Parameters and Common

Source S--Parameters

MRF8P26080HSR3

•

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

RF /V

outA DSA

inA GSA

•

Designed for Digital Predistortion Error Correction Systems

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel option, see p. 13.

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +65

--6.0, +10

32, +0

Unit

Drain--Source Voltage

Vdc

°C

DSS

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

--65 to +150

150

°C

(1,2)

225

°C

CW Operation @ T = 25°C

140

Derate above 25°C

1.26

W/°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

MRF8P26080HR3 MRF8P26080HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...14

中文翻译

下载PDF

与MRF8P26080HSR3相关器件

型号	品牌	获取价格	描述	数据表
MRF8P29300HR6	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P29300HSR6	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P8300H	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF8P8300HR6	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8P8300HR6	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF8P8300HSR6	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF8P8300HSR6	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8P9040GNR1	NXP	获取价格	CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V
MRF8P9040N	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF8P9040NBR1	NXP	获取价格	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, ROHS COMPLIANT, PLASTIC, CAS

与MRF8P26080HSR3相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

9
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

8
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

12
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

19

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF8P26080HSR3

MRF8P26080HSR3 数据手册

与MRF8P26080HSR3相关器件

与MRF8P26080HSR3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF8P26080HSR3

MRF8P26080HSR3 数据手册

与MRF8P26080HSR3相关器件

与MRF8P26080HSR3相关文章

您还可以找

您在本页遇到什么问题？