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MRF8P23160WHSR3 PDF预览

MRF8P23160WHSR3

更新时间： 2024-09-26 21:13:15
品牌 Logo 应用领域
恩智浦 - NXP 放大器晶体管
页数 文件大小 规格书
13页 587K
描述
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN

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MRF8P23160WHSR3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：FLATPACK, R-CDFP-F4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.29.00.75
风险等级：5.64外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：S BAND
JESD-30 代码：R-CDFP-F4元件数量：1
端子数量：4工作模式：ENHANCEMENT MODE
最高工作温度：225 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLATPACK
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

MRF8P23160WHSR3 数据手册

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Document Number: MRF8P23160WH  
Rev. 0, 12/2011  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
MRF8P23160WHR3  
MRF8P23160WHSR3  
Designed for base station applications with wide instantaneous bandwidth  
requirements covering frequencies from 2300 to 2400 MHz.  
•
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,  
IDQA = 600 mA, VGSB = 1.2 Vdc, Pout = 30 Watts Avg., IQ Magnitude  
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @  
0.01% Probability on CCDF.  
2300--2400 MHz, 30 W AVG., 28 V  
SINGLE W--CDMA  
LATERAL N--CHANNEL  
RF POWER MOSFETs  
G
η
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
Frequency  
2300 MHz  
2350 MHz  
2400 MHz  
(dB)  
13.9  
14.1  
13.8  
(%)  
37.1  
38.3  
38.3  
7.9  
7.7  
7.4  
--31.0  
--32.2  
--33.1  
•
•
Capable of Handling 10:1 VSWR, @ 30 Vdc, 2350 MHz, 144 Watts CW (1)  
Output Power (3 dB Input Overdrive from Rated Pout  
Typical Pout @ 3 dB Compression Point ≃ 190 Watts (2)  
)
CASE 465M--01, STYLE 1  
N I -- 7 8 0 -- 4  
MRF8P23160WHR3  
Features  
•
•
•
•
•
Designed for Wide Instantaneous Bandwidth Applications  
Designed for Wideband Applications that Require 100 MHz Signal Bandwidth  
Production Tested in a Symmetrical Doherty Configuration  
100% PAR Tested for Guaranteed Output Power Capability  
Characterized with Large--Signal Load--Pull Parameters and Common Source  
S--Parameters  
Internally Matched for Ease of Use  
Integrated ESD Protection  
Greater Negative Gate--Source Voltage Range for Improved Class C Operation  
Designed for Digital Predistortion Error Correction Systems  
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,  
13 inch Reel. For R5 Tape and Reel option, see p. 14.  
CASE 465H--02, STYLE 1  
NI--780S--4  
MRF8P23160WHSR3  
•
•
•
•
•
RF /V  
RF /V  
outA DSA  
3
4
1
2
inA GSA  
•
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,  
13 inch Reel. For R5 Tape and Reel option, see p. 14.  
RF /V  
inB GSB  
RF /V  
outB DSB  
(Top View)  
Figure 1. Pin Connections  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Drain--Source Voltage  
V
--0.5, +65  
--6.0, +10  
Vdc  
Vdc  
Vdc  
°C  
DSS  
Gate--Source Voltage  
V
GS  
DD  
Operating Voltage  
V
32, +0  
--65 to +150  
125  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
T
°C  
C
(3,4)  
T
225  
°C  
J
CW Operation @ T = 25°C  
CW  
129  
W
C
Derate above 25°C  
0.48  
W/°C  
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.  
2. P3dB = P + 7.0 dB where P is the average output power measured using an unclipped W--CDMA single--carrier input signal where  
avg  
avg  
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.  
3. Continuous use at maximum temperature will affect MTTF.  
4. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
© Freescale Semiconductor, Inc., 2011. All rights reserved.  
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