Datasheet > MRF6S21060NR1_08

MRF6S21060NR1_08

更新时间： 2024-01-21 09:35:24

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
20页	870K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S21060NR1_08 数据手册

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

Machine Model (per EIA/JESD22-A115)

Charge Device Model (per JESD22-C101)

Table 4. Moisture Sensitivity Level

Test Methodology

1B (Minimum)

A (Minimum)

III (Minimum)

Rating

Package Peak Temperature

Unit

Per JESD22-A113, IPC/JEDEC J-STD-020

260

°C

Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(V = 68 Vdc, V = 0 Vdc)

—

μAdc

DSS

Zero Gate Voltage Drain Leakage Current

(V = 28 Vdc, V = 0 Vdc)

DSS

Gate-Source Leakage Current

(V = 5 Vdc, V = 0 Vdc)

GSS

On Characteristics (DC)

Gate Threshold Voltage

(V = 10 Vdc, I = 200 μAdc)

1.5

2.2

2.8

0.3

2.5

Vdc

GS(th)

Gate Quiescent Voltage

(V = 28 Vdc, I = 610 mAdc, Measured in Functional Test)

GS(Q)

Drain-Source On-Voltage

(V = 10 Vdc, I = 2.0 Adc)

DS(on)

—

(1)

Dynamic Characteristics

Reverse Transfer Capacitance

(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

rss

—

1.5

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 610 mA, P = 14 W Avg., f1 = 2115.5 MHz, f2 =

out

2122.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz

Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

13.5

24.5

—

15.5

16.5

—

Drain Efficiency

Intermodulation Distortion

Adjacent Channel Power Ratio

Input Return Loss

IM3

ACPR

IRL

-37

-40

-14

-35

-38

-10

dBc

—

ꢂꢃ1. Part is internally matched both on input and output.

MRF6S21060NR1 MRF6S21060NBR1

RF Device Data

Freescale Semiconductor

123 4 5 6 7...20

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