MMUN2234LT3

更新时间： 2024-11-02 03:48:55

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
12页	100K
描述
Bias Resistor Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMUN2234LT3 数据手册

MMUN2211LT1 Series

Preferred Devices

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SOT-23 package which is designed for low power surface mount

applications.

http://onsemi.com

PIN 3

COLLECTOR

(OUTPUT)

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

• Simplifies Circuit Design

• Reduces Board Space and Component Count

• Pb−Free Packages are Available

MARKING DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

A8x M G

SOT−23

CASE 318

STYLE 6

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

Vdc

A8x = Specific Device Code

100

mAdc

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

246 (Note 1)

400 (Note 2)

1.5 (Note 1)

2.0 (Note 2)

T = 25°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 11 of this data sheet.

Derate above 25°C

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Lead

508 (Note 1)

311 (Note 2)

Preferred devices are recommended choices for future use

and best overall value.

174 (Note 1)

208 (Note 2)

°C/W

°C

Junction and Storage Temperature

Range

T , T

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ minimum pad

2. FR−4 @ 1.0 x 1.0 inch pad

Publication Order Number:

August, 2005 − Rev. 7

MMUN2211LT1/D

12 3 4 5 6 7...12

中文翻译

下载PDF

与MMUN2234LT3相关器件

型号	品牌	获取价格	描述	数据表
MMUN2234LT3G	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2235	WEITRON	获取价格	Bias Resistor Transistor NPN Silicon
MMUN2235L	ONSEMI	获取价格	NPN Transistors with Monolithic Bias Resistor Network
MMUN2235LT1	LRC	获取价格	Bias Resistor Transistor
MMUN2235LT1G	ONSEMI	获取价格	NPN Bipolar Digital Transistor (BRT)
MMUN2236L	ONSEMI	获取价格	Digital Transistors (BRT)
MMUN2236LT1G	ONSEMI	获取价格	Digital Transistors (BRT)
MMUN2237L	ONSEMI	获取价格	Digital Transistors (BRT)
MMUN2237LT1G	ONSEMI	获取价格	Digital Transistors (BRT)
MMUN2238	WEITRON	获取价格	Bias Resistor Transistor NPN Silicon

与MMUN2234LT3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

5
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

MMUN2234LT3

MMUN2234LT3 数据手册

与MMUN2234LT3相关器件

与MMUN2234LT3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMUN2234LT3

MMUN2234LT3 数据手册

与MMUN2234LT3相关器件

与MMUN2234LT3相关文章

您还可以找

您在本页遇到什么问题？