5秒后页面跳转
MMUN2235L PDF预览

MMUN2235L

更新时间: 2024-09-28 12:27:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
12页 149K
描述
NPN Transistors with Monolithic Bias Resistor Network

MMUN2235L 数据手册

 浏览型号MMUN2235L的Datasheet PDF文件第2页浏览型号MMUN2235L的Datasheet PDF文件第3页浏览型号MMUN2235L的Datasheet PDF文件第4页浏览型号MMUN2235L的Datasheet PDF文件第5页浏览型号MMUN2235L的Datasheet PDF文件第6页浏览型号MMUN2235L的Datasheet PDF文件第7页 
MUN2235, MMUN2235L,  
MUN5235, DTC123JE,  
DTC123JM3, NSBC123JF3  
Digital Transistors (BRT)  
R1 = 2.2 kW, R2 = 47 kW  
http://onsemi.com  
PIN CONNECTIONS  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
baseemitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
SC59  
CASE 318D  
STYLE 1  
XX MG  
G
1
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
SOT23  
CASE 318  
STYLE 6  
XXX MG  
G
1
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
Collector Current Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
SC70/SOT323  
CASE 419  
XX MG  
V
CBO  
CEO  
G
STYLE 3  
V
50  
Vdc  
1
I
C
100  
12  
mAdc  
Vdc  
SC75  
CASE 463  
STYLE 1  
V
IN(fwd)  
XX M  
XX M  
Input Reverse Voltage  
V
IN(rev)  
6
Vdc  
1
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
SOT723  
CASE 631AA  
STYLE 1  
1
SOT1123  
CASE 524AA  
STYLE 1  
X M  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
February, 2013 Rev. 1  
DTC123J/D  

与MMUN2235L相关器件

型号 品牌 获取价格 描述 数据表
MMUN2235LT1 LRC

获取价格

Bias Resistor Transistor
MMUN2235LT1G ONSEMI

获取价格

NPN Bipolar Digital Transistor (BRT)
MMUN2236L ONSEMI

获取价格

Digital Transistors (BRT)
MMUN2236LT1G ONSEMI

获取价格

Digital Transistors (BRT)
MMUN2237L ONSEMI

获取价格

Digital Transistors (BRT)
MMUN2237LT1G ONSEMI

获取价格

Digital Transistors (BRT)
MMUN2238 WEITRON

获取价格

Bias Resistor Transistor NPN Silicon
MMUN2238L ONSEMI

获取价格

Digital Transistors (BRT) R1 = 2.2 k, R2 =  k
MMUN2238LT1 ONSEMI

获取价格

Bias Resistor Transistor
MMUN2238LT1 LRC

获取价格

Bias Resistor Transistor