MMV02N023UKS
N-Channel Enhancement Mode MOSFET
Features
Drain
• Low voltage gate drive
• Surface-mounted package
6 D
5 D
4 S
D 1
D 2
G 3
D
S
• Typical ESD Protection HBM Class 2
Gate
Classification
Voltage Range(V)
1. Drain 2. Drain 3. Gate
4. Sourse 5. Drain 6. Drain
0A
0B
1A
1B
1C
2
< 125
Source
125 to < 250
250 to < 500
500 to < 1000
1000 to < 2000
2000 to < 4000
4000 to < 8000
≥ 8000
DFN2020-6HMA Plastic Package
3A
3B
Applications
• Portable appliances
• Battery management
Absolute Maximum Ratings(at Ta = 25℃ unless otherwise specified)
Parameter Symbol
Value
Unit
V
Drain-Source Voltage
Drain-Gate Voltage
VDSS
VGS
ID
20
± 12
V
Drain Current - Continuous
Drain Current - Pulsed 1)
Total Power Dissipation 2)
6
32
A
IDM
A
Ptot
2.8
W
℃
t ≤ 10 s
Operating Junction and Storage Temperature Range
Tj, Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJA
Max.
Unit
t ≤ 10 s
Steady-State
45
80
Thermal Resistance from Junction to Ambient 2)
℃/W
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 15/06/2022 Z Rev:02