MUN2236, MMUN2236L,
MUN5236, DTC115EE,
DTC115EM3
Digital Transistors (BRT)
R1 = 100 kW, R2 = 100 kW
www.onsemi.com
NPN Transistors with Monolithic Bias
Resistor Network
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
MARKING DIAGRAMS
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
SC−59
CASE 318D
STYLE 1
XX MG
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
SOT−23
CASE 318
STYLE 6
XXX MG
Compliant
G
MAXIMUM RATINGS (T = 25°C)
1
A
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Symbol
Max
50
Unit
Vdc
SC−70/SOT−323
CASE 419
XX MG
V
CBO
G
STYLE 3
V
CEO
50
Vdc
1
I
C
100
40
mAdc
Vdc
SC−75
CASE 463
STYLE 1
XX M
XX M
V
IN(fwd)
1
Input Reverse Voltage
V
IN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−723
CASE 631AA
STYLE 1
1
XXX
M
G
=
=
=
Specific Device Code
Date Code*
Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
November, 2016 − Rev. 3
DTC115E/D