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MMUN2237LT1G PDF预览

MMUN2237LT1G

更新时间： 2024-01-30 21:35:41
品牌 Logo 应用领域
安森美 - ONSEMI PC开关光电二极管晶体管
页数 文件大小 规格书
12页 140K
描述
Digital Transistors (BRT)

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中文翻译

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MMUN2237LT1G 技术参数

是否无铅：不含铅生命周期：Active
包装说明：TO-236, 318-08, 3 PIN针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：2 weeks风险等级：1.54
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：1071766Samacsys Pin Count：3
Samacsys Part Category：Transistor RET NPNSamacsys Package Category：SOT23 (3-Pin)
Samacsys Footprint Name：SOT-23 (TO-236) CASE 318-08Samacsys Released Date：2018-01-28 10:05:04
Is Samacsys：N其他特性：BUILT IN BIAS RESISTANCE RATIO IS 0.47
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：0.338 W
参考标准：AEC-Q101子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMUN2237LT1G 数据手册

 浏览型号MMUN2237LT1G的Datasheet PDF文件第2页浏览型号MMUN2237LT1G的Datasheet PDF文件第3页浏览型号MMUN2237LT1G的Datasheet PDF文件第4页浏览型号MMUN2237LT1G的Datasheet PDF文件第5页浏览型号MMUN2237LT1G的Datasheet PDF文件第6页浏览型号MMUN2237LT1G的Datasheet PDF文件第7页 
MUN2237, MMUN2237L,  
MUN5237, DTC144WE,  
DTC144WM3, NSBC144WF3  
Digital Transistors (BRT)  
R1 = 47 kW, R2 = 22 kW  
www.onsemi.com  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN CONNECTIONS  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
SC−59  
CASE 318D  
STYLE 1  
XX MG  
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
SOT−23  
CASE 318  
STYLE 6  
XXX MG  
Compliant  
G
1
MAXIMUM RATINGS (T = 25°C)  
A
SC−70/SOT−323  
CASE 419  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
XX MG  
G
V
CBO  
CEO  
STYLE 3  
1
V
50  
Vdc  
SC−75  
CASE 463  
STYLE 1  
I
C
100  
40  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
IN(rev)  
10  
Vdc  
SOT−723  
CASE 631AA  
STYLE 1  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1
SOT−1123  
CASE 524AA  
STYLE 1  
X M  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending up-  
on manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
October, 2016 − Rev. 5  
DTC144W/D  
1234567...12

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