Datasheet > MMV04P055LS-AH

MMV04P055LS-AH

更新时间： 2024-11-25 14:51:35

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	496K
描述
小信号金氧半電晶體

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中文翻译

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数据手册

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MMV04P055LS-AH 数据手册

MMV04P055LS-AH

P-Channel Enhancement Mode MOSFET

Features

Drain

• AEC-Q101 Qualified

• Surface-mounted package

• Halogen and Antimony Free(HAF),

6 D

5 D

4 S

D 1

D 2

G 3

RoHS compliant

Gate

1. Drain 2. Drain 3. Gate

4. Sourse 5. Drain 6. Drain

Application

Source

DFN2020-6HMA Plastic Package

• Portable appliances

• Battery management

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Symbol

Value

Unit

Parameter

-V_DS

V_GS

Drain-Source Voltage

± 20

Gate-Source Voltage

Drain Current

-I_D

Peak Drain Current, Pulsed ¹⁾

-I_DM

P_tot

Power Dissipation ²⁾

℃

Operating Junction and Storage Temperature Range

T_J,T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

62.5

Unit

Thermal Resistance from Junction to Ambient ²⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

℃/W

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

1 / 6

Dated: 27/09/2023 Rev:01

12 3 4 5 6

中文翻译

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