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MMUN2238L PDF预览

MMUN2238L

更新时间: 2024-01-14 04:23:06
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
12页 148K
描述
Digital Transistors (BRT) R1 = 2.2 k, R2 =  k

MMUN2238L 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.76Is Samacsys:N
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):160
元件数量:1极性/信道类型:NPN
最大功率耗散 (Abs):0.246 W子类别:BIP General Purpose Small Signal
表面贴装:YES晶体管元件材料:SILICON
Base Number Matches:1

MMUN2238L 数据手册

 浏览型号MMUN2238L的Datasheet PDF文件第2页浏览型号MMUN2238L的Datasheet PDF文件第3页浏览型号MMUN2238L的Datasheet PDF文件第4页浏览型号MMUN2238L的Datasheet PDF文件第5页浏览型号MMUN2238L的Datasheet PDF文件第6页浏览型号MMUN2238L的Datasheet PDF文件第7页 
MUN2238, MMUN2238L,  
MUN5238, DTC123TE,  
DTC123TM3, NSBC123TF3  
Digital Transistors (BRT)  
R1 = 2.2 kW, R2 = 8 kW  
http://onsemi.com  
PIN CONNECTIONS  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
MARKING DIAGRAMS  
Features  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
SC59  
CASE 318D  
STYLE 1  
XX MG  
G
1
SOT23  
CASE 318  
STYLE 6  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
XXX MG  
G
1
MAXIMUM RATINGS (T = 25°C)  
A
SC70/SOT323  
CASE 419  
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
Collector Current Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
XX MG  
G
V
CBO  
V
CEO  
STYLE 3  
1
50  
Vdc  
SC75  
CASE 463  
STYLE 1  
I
C
100  
12  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
IN(rev)  
6
Vdc  
SOT723  
CASE 631AA  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
SOT1123  
CASE 524AA  
STYLE 1  
X M  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
February, 2013 Rev. 1  
DTC123T/D  

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