Datasheet > MMV10N280LKS

MMV10N280LKS

更新时间： 2024-10-01 14:53:27

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	404K
描述
小信号金氧半電晶體

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中文翻译

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数据手册

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MMV10N280LKS 数据手册

MMV10N280LKS

N-Channel Enhancement Mode MOSFET

Features

Drain

• Extremely low threshold voltage

• Surface-mounted package

6 D

5 D

4 S

D 1

D 2

G 3

• Typical ESD Protection HBM Class 2

Gate

Classification Voltage Range(V)

1. Drain 2. Drain 3. Gate

4. Sourse 5. Drain 6. Drain

< 125

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

DFN2020-6HMA Plastic Package

Source

Applications

• Portable appliances

• Battery management

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

100

Gate-Source Voltage

V_GS

± 20

I_D

Drain Current

Peak Drain Current, Pulsed ¹⁾

Power Dissipation ²⁾

I_DM

1.6

P_D

℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

R_θJA

Max.

Unit

Thermal Resistance from Junction to Ambient ²⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

℃/W

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 6

Dated: 16/09/2021 Rev:01

12 3 4 5 6

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