Datasheet > MMV02P050USK

MMV02P050USK

更新时间： 2023-12-06 20:00:49

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	457K
描述
小信号金氧半電晶體

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MMV02P050USK 数据手册

MMV02P050USK

P-Channel Enhancement Mode MOSFET

Features

Drain

• Surface-mounted package

• Built-in G-S Protection Diode

• Typical ESD Protection HBM Class 2

6 D

5 D

4 S

D 1

D 2

G 3

Gate

Classification

Voltage Range(V)

1. Drain 2. Drain 3. Gate

4. Sourse 5. Drain 6. Drain

< 125

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

DFN2020-6HMA Plastic Package

Source

Applications

• Portable appliances

• Battery management

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

-V_DS

V_GS

-I_D

± 12

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

4.5

Peak Drain Current, Pulsed ¹⁾

-I_DM

P_D

Power Dissipation ²⁾

1.5

℃

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

R_θJA

Max.

Unit

Thermal Resistance from Junction to Ambient ²⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

℃/W

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

1 / 6

Dated: 27/04/2023 Z Rev:02

12 3 4 5 6

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