Datasheet > MMV02N035LS

MMV02N035LS

更新时间： 2024-11-25 14:55:35

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
7页	575K
描述
小信号金氧半電晶體

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数据手册

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MMV02N035LS 数据手册

MMV02N035LS

N-Channel Enhancement Mode MOSFET

Features

Drain

• Low Threshold Voltage

6 D

5 D

4 S

D 1

D 2

G 3

Gate

1. Drain 2. Drain 3. Gate

4. Sourse 5. Drain 6. Drain

DFN2020-6HA Plastic Package

Applications

Source

• Portable appliances

• Battery management

• Load switch

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

V_GS

I_D

Value

Unit

Drain-Source Voltage

Drain-Gate Voltage

Drain Current

± 20

Peak Drain Current, Pulsed ¹⁾

I_DM

Single Pulsed Avalanche Current ²⁾

Single Pulsed Avalanche Energy ²⁾

Total Power Dissipation

I_AS

1.4

℃

E_AS

P_tot

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

Unit

Thermal Resistance-Junction to Ambient ³⁾

Steady State

℃/W

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX) = 150°C.

²⁾Limited by T_J(max), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 11 A, V_GS= 10 V.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 25/09/2020 Rev: 01

12 3 4 5 6 7

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