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MMUN2236LT1G PDF预览

MMUN2236LT1G

更新时间： 2024-11-03 01:19:11
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
10页 125K
描述
Digital Transistors (BRT)

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中文翻译

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MMUN2236LT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：2 weeks风险等级：1.6
其他特性：BUILT IN BIAS RESISTANCE RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JEDEC-95代码：TO-236AB
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.4 W子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMUN2236LT1G 数据手册

 浏览型号MMUN2236LT1G的Datasheet PDF文件第2页浏览型号MMUN2236LT1G的Datasheet PDF文件第3页浏览型号MMUN2236LT1G的Datasheet PDF文件第4页浏览型号MMUN2236LT1G的Datasheet PDF文件第5页浏览型号MMUN2236LT1G的Datasheet PDF文件第6页浏览型号MMUN2236LT1G的Datasheet PDF文件第7页 
MUN2236, MMUN2236L,  
MUN5236, DTC115EE,  
DTC115EM3  
Digital Transistors (BRT)  
R1 = 100 kW, R2 = 100 kW  
www.onsemi.com  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN CONNECTIONS  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base−  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
SC−59  
CASE 318D  
STYLE 1  
XX MG  
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
SOT−23  
CASE 318  
STYLE 6  
XXX MG  
Compliant  
G
MAXIMUM RATINGS (T = 25°C)  
1
A
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
SC−70/SOT−323  
CASE 419  
XX MG  
V
CBO  
G
STYLE 3  
V
CEO  
50  
Vdc  
1
I
C
100  
40  
mAdc  
Vdc  
SC−75  
CASE 463  
STYLE 1  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
IN(rev)  
10  
Vdc  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
SOT−723  
CASE 631AA  
STYLE 1  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending up-  
on manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
November, 2016 − Rev. 3  
DTC115E/D  
1234567...10

中文翻译

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MMUN2236LT1G 替代型号

型号 品牌 替代类型 描述 数据表
MUN5241T1G ONSEMI

功能相似

 Digital Transistors (BRT) R1 = 100 k R2 = k
PDTC115EEF,115 NXP

功能相似

 20mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-89, 3 PIN

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