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MUN5241T1G PDF预览

MUN5241T1G

更新时间: 2024-01-27 12:55:42
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
11页 143K
描述
Digital Transistors (BRT) R1 = 100 k R2 = k

MUN5241T1G 数据手册

 浏览型号MUN5241T1G的Datasheet PDF文件第2页浏览型号MUN5241T1G的Datasheet PDF文件第3页浏览型号MUN5241T1G的Datasheet PDF文件第4页浏览型号MUN5241T1G的Datasheet PDF文件第5页浏览型号MUN5241T1G的Datasheet PDF文件第6页浏览型号MUN5241T1G的Datasheet PDF文件第7页 
MUN2241, MMUN2241L,  
MUN5241, DTC115TE,  
DTC115TM3, NSBC115TF3  
Digital Transistors (BRT)  
R1 = 100 kW, R2 = 8 kW  
http://onsemi.com  
PIN CONNECTIONS  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
SC59  
CASE 318D  
STYLE 1  
XX MG  
G
1
SOT23  
CASE 318  
STYLE 6  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
XXX MG  
G
1
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
Collector Current Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
SC70/SOT323  
CASE 419  
XX MG  
V
CBO  
CEO  
G
STYLE 3  
V
50  
Vdc  
1
I
C
100  
40  
mAdc  
Vdc  
SC75  
CASE 463  
STYLE 1  
XX M  
XX M  
V
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
6
Vdc  
1
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
SOT723  
CASE 631AA  
STYLE 1  
1
SOT1123  
CASE 524AA  
STYLE 1  
X M  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
February, 2012 Rev. 1  
DTC115T/D  

MUN5241T1G 替代型号

型号 品牌 替代类型 描述 数据表
MMUN2236LT1G ONSEMI

功能相似

Digital Transistors (BRT)
PDTC115EEF,115 NXP

功能相似

20mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-89, 3 PIN

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