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MUN5312DW1T2G

更新时间： 2024-11-25 01:11:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 105K
描述
Complementary Bias Resistor Transistors

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中文翻译

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MUN5312DW1T2G 数据手册

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MUN5312DW1,  
NSBC124EPDXV6,  
NSBC124EPDP6  
Complementary Bias  
Resistor Transistors  
www.onsemi.com  
PIN CONNECTIONS  
(2)  
R1 = 22 kW, R2 = 22 kW  
NPN and PNP Transistors with Monolithic  
Bias Resistor Network  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
(3)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
Features  
R
1
• Simplifies Circuit Design  
• Reduces Board Space  
(4)  
(5)  
(6)  
• Reduces Component Count  
MARKING DIAGRAMS  
• S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable*  
6
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
SOT−363  
CASE 419B  
12 M G  
Compliant  
G
MAXIMUM RATINGS  
(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)  
A
1
1
2
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
SOT−563  
CASE 463A  
1
12 M G  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
CEO  
G
V
50  
Vdc  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
40  
mAdc  
Vdc  
C
V
IN(fwd)  
SOT−963  
CASE 527AD  
Input Reverse Voltage  
V
10  
Vdc  
M G  
IN(rev)  
G
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1
12/R  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MUN5312DW1T1G,  
SMUN5312DW1T1G*  
SOT−363  
3,000 / Tape & Reel  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending up-  
on manufacturing location.  
NSVMUN5312DW1T3G*  
SOT−363  
SOT−363  
10,000 / Tape & Reel  
3,000 / Tape & Reel  
MUN5312DW1T2G,  
NSVMUN5312DW1T2G*  
NSBC124EPDXV6T1G  
NSBC124EPDXV6T5G  
NSBC124EPDP6T5G  
SOT−563  
SOT−563  
SOT−963  
4,000 / Tape & Reel  
8,000 / Tape & Reel  
8,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
June, 2015 − Rev. 3  
DTC124EP/D  
1234567...10

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MUN5312DW1T2G 替代型号

型号 品牌 替代类型 描述 数据表
MUN5312DW1T1G ONSEMI

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