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MUN5314DW1T1G PDF预览

MUN5314DW1T1G

更新时间： 2024-11-02 04:38:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
35页 374K
描述
Dual Bias Resistor Transistors

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中文翻译

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MUN5314DW1T1G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：SC-70包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.96Is Samacsys：N
其他特性：BUILT-IN BIAS RESISTOR RATIO 4.7最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MUN5314DW1T1G 数据手册

 浏览型号MUN5314DW1T1G的Datasheet PDF文件第2页浏览型号MUN5314DW1T1G的Datasheet PDF文件第3页浏览型号MUN5314DW1T1G的Datasheet PDF文件第4页浏览型号MUN5314DW1T1G的Datasheet PDF文件第5页浏览型号MUN5314DW1T1G的Datasheet PDF文件第6页浏览型号MUN5314DW1T1G的Datasheet PDF文件第7页 
MUN5311DW1T1 Series  
Preferred Devices  
Dual Bias Resistor  
Transistors  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the MUN5311DW1T1 series,  
two complementary BRT devices are housed in the SOT−363 package  
which is ideal for low power surface mount applications where board  
space is at a premium.  
(3)  
(2)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
Features  
• Simplifies Circuit Design  
• Reduces Board Space  
6
1
• Reduces Component Count  
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
• Pb−Free Packages are Available  
SOT−363  
CASE 419B  
STYLE 1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
MARKING DIAGRAM  
and Q , − minus sign for Q (PNP) omitted)  
2
1
6
Rating  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
xx M G  
V
CBO  
CEO  
G
Collector-Emitter Voltage  
Collector Current  
V
50  
Vdc  
1
I
C
100  
mAdc  
xx  
M
G
= Device Code  
= Date Code*  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
(Note: Microdot may be in either location)  
Total Device Dissipation  
P
D
187 (Note 1)  
256 (Note 2)  
1.5 (Note 1)  
2.0 (Note 2)  
mW  
*Date Code orientation and/or position may  
vary depending upon manufacturing location.  
T = 25°C  
A
Derate above 25°C  
mW/°C  
°C/W  
Thermal Resistance −  
Junction-to-Ambient  
R
670 (Note 1)  
490 (Note 2)  
q
JA  
ORDERING AND DEVICE MARKING  
INFORMATION  
See detailed ordering, shipping, and specific marking  
information in the table on page 2 of this data sheet.  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
250 (Note 1)  
385 (Note 2)  
2.0 (Note 1)  
3.0 (Note 2)  
mW  
D
T = 25°C  
A
Preferred devices are recommended choices for future use  
and best overall value.  
Derate above 25°C  
mW/°C  
°C/W  
°C/W  
°C  
Thermal Resistance −  
Junction-to-Ambient  
R
493 (Note 1)  
325 (Note 2)  
q
JA  
Thermal Resistance −  
Junction-to-Lead  
R
188 (Note 1)  
208 (Note 2)  
q
JL  
Junction and Storage Temperature T , T  
−55 to +150  
J
stg  
1. FR−4 @ Minimum Pad  
2. FR−4 @ 1.0 x 1.0 inch Pad  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 11  
MUN5311DW1T1/D  
1234567...35

中文翻译

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MUN5314DW1T1G 替代型号

型号 品牌 替代类型 描述 数据表
UMD9NTR ROHM

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