Datasheet > MUN5316DW1T1

MUN5316DW1T1

更新时间： 2024-10-29 04:38:39

品牌	Logo	应用领域
ETL		晶体晶体管
页数	文件大小	规格书
13页	662K
描述
Dual Bias Resistor Transistors

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中文翻译

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数据手册

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MUN5316DW1T1 数据手册

Dual Bias Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

MUN5311DW1T1

Series

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-

sistors are designed to replace a single device and its external resistor bias network. The BRT

eliminates these individual components by integrating them into a single device. In the

MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package

which is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

SOT 363

CASE 419B STYLE1

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1

and Q 2 , – minus sign for Q 1 (PNP) omitted)

R₁

R₂

Rating

Symbol Value

Unit

Vdc

Q₂

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V _CBO

V _CEO

I _C

R₂

Q₁

Vdc

R₁

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

MARKING DIAGRAM

(One Junction Heated)

Total Device Dissipation

T _A= 25°C

Symbol

Max

Unit

P _D

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

Derate above 25°C

mW/°C

°C/W

Thermal Resistance –

Junction-to-Ambient

R _θJA

xx = Device Marking

= (See Page 2)

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

Total Device Dissipation

T _A= 25°C

P _D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Derate above 25°C

mW/°C

°C/W

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R _θJA

R _θJL

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

T _J, T _stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

MUN5311dw–1/13

12 3 4 5 6 7...13

中文翻译

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与MUN5316DW1T1相关器件

型号	品牌	获取价格	描述	数据表
MUN5316DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5316DW1T2	MOTOROLA	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
MUN5316DW1T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
MUN5330DW	WEITRON	获取价格	Dual Bias Resistor Transistor NPNPNP Silicon
MUN5330DW1T1	LRC	获取价格	Dual Bias Resistor Transistors
MUN5330DW1T1	ETL	获取价格	Dual Bias Resistor Transistors
MUN5330DW1T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5330DW1T1	MOTOROLA	获取价格	Dual Bias Resistor Transistors
MUN5330DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5330DW1T2	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

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