Datasheet > MUN5332DW1

MUN5332DW1

更新时间： 2024-11-27 12:22:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
10页	167K
描述
Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

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MUN5332DW1 数据手册

MUN5332DW1,

NSBC143EPDXV6,

NSBC143EPDP6

Complementary Bias

Resistor Transistors

R1 = 4.7 kW, R2 = 4.7 kW

http://onsemi.com

PIN CONNECTIONS

(2)

NPN and PNP Transistors with Monolithic

Bias Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

(4)

(5)

(6)

 Simplifies Circuit Design

 Reduces Board Space

 Reduces Component Count

 S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

MARKING DIAGRAMS

SOT−363

CASE 419B

32 M G

 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

SOT−563

CASE 463A

32 M G

(T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted)

Rating

Symbol

Max

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

SOT−963

M G

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

CASE 527AD

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

32/V

Specific Device Code

Date Code*

Pb-Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MUN5332DW1T1G,

NSVMUN5332DW1T1G

SOT−363

3,000/Tape & Reel

NSBC143EPDXV6T1G

NSBC143EPDP6T5G

SOT−563

SOT−963

4,000/Tape & Reel

8,000/Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2012

Publication Order Number:

September, 2012 − Rev. 0

DTC143EP/D

12 3 4 5 6 7...10

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与MUN5332DW1相关器件

型号	品牌	获取价格	描述	数据表
MUN5332DW1T1	ETL	获取价格	Dual Bias Resistor Transistors
MUN5332DW1T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5332DW1T1	LRC	获取价格	Dual Bias Resistor Transistors
MUN5332DW1T1	MOTOROLA	获取价格	Dual Bias Resistor Transistors
MUN5332DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5332DW1T2	MOTOROLA	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
MUN5333DW	WEITRON	获取价格	Dual Bias Resistor Transistor NPNPNP Silicon
MUN5333DW1	ONSEMI	获取价格	Complementary Bias Resistor Transistors
MUN5333DW1_16	ONSEMI	获取价格	Complementary Bias Resistor Transistors
MUN5333DW1T1	ETL	获取价格	Dual Bias Resistor Transistors

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