Datasheet > MUN5332DW1T1

MUN5332DW1T1

更新时间： 2024-11-27 04:38:39

品牌	Logo	应用领域
ETL		晶体晶体管
页数	文件大小	规格书
13页	662K
描述
Dual Bias Resistor Transistors

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中文翻译

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数据手册

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MUN5332DW1T1 数据手册

Dual Bias Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

MUN5311DW1T1

Series

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-

sistors are designed to replace a single device and its external resistor bias network. The BRT

eliminates these individual components by integrating them into a single device. In the

MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package

which is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

SOT 363

CASE 419B STYLE1

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1

and Q 2 , – minus sign for Q 1 (PNP) omitted)

R₁

R₂

Rating

Symbol Value

Unit

Vdc

Q₂

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V _CBO

V _CEO

I _C

R₂

Q₁

Vdc

R₁

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

MARKING DIAGRAM

(One Junction Heated)

Total Device Dissipation

T _A= 25°C

Symbol

Max

Unit

P _D

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

Derate above 25°C

mW/°C

°C/W

Thermal Resistance –

Junction-to-Ambient

R _θJA

xx = Device Marking

= (See Page 2)

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

Total Device Dissipation

T _A= 25°C

P _D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Derate above 25°C

mW/°C

°C/W

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R _θJA

R _θJL

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

T _J, T _stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

MUN5311dw–1/13

12 3 4 5 6 7...13

中文翻译

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