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MUN5334DW1T1

更新时间： 2024-01-08 00:21:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管
页数 文件大小 规格书
16页 310K
描述
Dual Bias Resistor Transistors

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中文翻译

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MUN5334DW1T1 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-70包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：2 weeks
风险等级：0.96其他特性：BUILT-IN BIAS RESISTOR RATIO 2.14
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN AND PNP最大功率耗散 (Abs)：0.385 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MUN5334DW1T1 数据手册

 浏览型号MUN5334DW1T1的Datasheet PDF文件第2页浏览型号MUN5334DW1T1的Datasheet PDF文件第3页浏览型号MUN5334DW1T1的Datasheet PDF文件第4页浏览型号MUN5334DW1T1的Datasheet PDF文件第5页浏览型号MUN5334DW1T1的Datasheet PDF文件第6页浏览型号MUN5334DW1T1的Datasheet PDF文件第7页 
Order this document  
by MUN5311DW1T1/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN and PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
Motorola Preferred Devices  
The BRT (Bias Resistor Transistor) contains a single transistor with a  
monolithic bias network consisting of two resistors; a series base resistor and a  
base–emitter resistor. These digital transistors are designed to replace a single  
device and its external resistor bias network. The BRT eliminates these  
individual components by integrating them into a single device. In the  
MUN5311DW1T1 series, two complementary BRT devices are housed in the  
SOT–363 package which is ideal for low power surface mount applications  
where board space is at a premium.  
6
5
4
1
2
3
CASE 419B–01, STYLE 1  
SOT–363  
•
•
•
•
Simplifies Circuit Design  
Reduces Board Space  
(3)  
(2)  
R
(1)  
Reduces Component Count  
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.  
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q and Q , – minus sign for Q (PNP) omitted)  
A
1
2
2
Rating  
Symbol  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
V
50  
50  
Vdc  
Vdc  
CBO  
CEO  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction-to-Ambient (surface mounted)  
Operating and Storage Temperature Range  
R
833  
°C/W  
°C  
θJA  
T , T  
–65 to +150  
*150  
J
stg  
(1)  
Total Package Dissipation @ T = 25°C  
P
mW  
A
D
DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES  
Device  
Marking  
R1 (K)  
R2 (K)  
MUN5311DW1T1  
MUN5312DW1T1  
MUN5313DW1T1  
MUN5314DW1T1  
MUN5315DW1T1  
11  
12  
13  
14  
15  
16  
30  
31  
32  
33  
34  
35  
10  
22  
47  
10  
10  
10  
22  
47  
47  
∞
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
MUN5316DW1T1  
MUN5330DW1T1  
MUN5331DW1T1  
MUN5332DW1T1  
MUN5333DW1T1  
MUN5334DW1T1  
MUN5335DW1T1  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
∞
1.0  
2.2  
4.7  
47  
47  
47  
2.2  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. New resistor combinations. Updated curves to follow in subsequent data sheets.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 3  
Motorola, Inc. 1997  
1234567...16

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