Datasheet > MUPT17E3

MUPT17E3

更新时间： 2024-12-01 04:21:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	447K
描述
Trans Voltage Suppressor Diode

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中文翻译

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技术参数
数据手册

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MUPT17E3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.79
Base Number Matches：	1

MUPT17E3 数据手册

MUPT5e3 – MUPT48e3

and MUPTB5e3 – MUPTB48e3

High-Reliability

Screening available in

reference to

5V – 48V Powermite1, Surface Mount

Available

Transient Voltage Suppressors

MIL-PRF-19500

DESCRIPTION

Tested in accordance

with the requirements of

AEC-Q101

Microsemi’s unique and new Powermite MUPT series of transient voltage suppressors feature

oxide-passivated chips with high-temperature solder bonds for high surge capability and negligible

electrical degradation under repeated surge conditions. Both unidirectional and bidirectional

configurations are available. In addition to its size advantages, the Powermite package includes a

fully metallic bottom (anode) side that eliminates the possibility of solder flux entrapment at

assembly and a unique locking tab design serves as an integral heat sink. Its innovative design

makes this device fully compatible for use with automatic insertion equipment.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES



Powermite package with standoff voltages 5 to 48 V.

Both unidirectional and bidirectional polarities:

-Anode to case bottom (MUPT5e3 thru MUPT48e3)

-Bidirectional (MUPTB5e3 thru MUPTB48e3)



Clamping time less than 100 pico-seconds for unidirectional and 5 nano-seconds for bidirectional.

100% surge current testing of all parts.

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.

Both RoHS and non-RoHS compliant versions available.

DO-216AA

Package

APPLICATIONS / BENEFITS

Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.



Protection from switching and induced RF transients.

-Integral heat sink / locking tabs

-Fully metallic bottom side eliminates flux entrapment

Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:

Class 1: MUPT5 /MUPTB8 to 17



Class 2: MUPT5 /MUPTB5 to 12

MAXIMUM RATINGS

Power Discretes & Modules

Business Unit

Discrete Products Group

Microsemi Corporation

Parameters/Test Conditions

Symbol

T_J/ T_STG

R_ӨJA

Value

Unit

^oC

Junction and Storage Temperature

Thermal Resistance Junction-to-Ambient ⁽¹⁾

Thermal Resistance Junction-to-Case (base tab)

Peak Pulse Power (see Figure 1 and Figure 2)

MUPT5e3 thru MUPT48e3:

-65 to +150

240

^oC/W

PDM – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

R_ӨJC

@ 8/20 µs @10/1000µs

P_PP

P_M(AV)

T_SP

1000

150

MUPTB5e3 thru MUPTB48e3:

Fax: (978) 689-0803

PDM – Ireland

Rated Average Power Dissipation

(base tab < 112 ^oC)

2.5

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Impulse Repetition Rate (duty factor)

Solder Temperature @ 10 s

0.01

260

^oC

Notes: 1. When mounted on FR4 PC board with 1 oz copper.

Website:

www.microsemi.com

RF01103-1, Rev. B (19/05/17)

Page 1 of 5

12 3 4 5

中文翻译

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与MUPT17E3相关器件

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MUPT17RE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode,
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MUPT33RE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode,
MUPT48E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode
MUPT5E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode,
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MUPT8R	MICROSEMI	获取价格	Trans Voltage Suppressor Diode,
MUPT8RE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode,
MUPTB10E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode,
MUPTB12E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode,

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