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MUN5336DW1T1G PDF预览

MUN5336DW1T1G

更新时间： 2024-12-01 01:16:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 109K
描述
Complementary Bias Resistor Transistors

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中文翻译

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MUN5336DW1T1G 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：8 weeks风险等级：5.74
JESD-609代码：e3湿度敏感等级：1
峰值回流温度（摄氏度）：NOT SPECIFIED端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MUN5336DW1T1G 数据手册

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MUN5336DW1  
Complementary Bias  
Resistor Transistors  
R1 = 100 kW, R2 = 100 kW  
NPN and PNP Transistors with Monolithic  
Bias Resistor Network  
http://onsemi.com  
PIN CONNECTIONS  
(2)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base-emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
(3)  
(1)  
R
1
R
2
Q
1
Features  
Q
2
• Simplifies Circuit Design  
R
2
R
1
• Reduces Board Space  
• Reduces Component Count  
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
Compliant  
(4)  
(5)  
(6)  
MARKING  
DIAGRAM  
MAXIMUM RATINGS  
A
(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)  
1
2
6
1
Rating  
Symbol  
Max  
50  
Unit  
Vdc  
SOT−363  
CASE 419B  
36 M G  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
CBO  
V
CEO  
G
50  
Vdc  
Collector Current − Continuous  
Input Forward Voltage  
I
100  
40  
mAdc  
Vdc  
C
V
36  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb-Free Package  
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
10  
Vdc  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MUN5336DW1T1G  
SOT−363  
3,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
January, 2014 − Rev. 0  
DTC115EP/D  
123456

中文翻译

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MUN5336DW1T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSVMUN5333DW1T1G ONSEMI

完全替代

 Dual Bias Resistor Transistors

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