MUN5336DW1
Complementary Bias
Resistor Transistors
R1 = 100 kW, R2 = 100 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
http://onsemi.com
PIN CONNECTIONS
(2)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
(3)
(1)
R
1
R
2
Q
1
Features
Q
2
• Simplifies Circuit Design
R
2
R
1
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
(4)
(5)
(6)
MARKING
DIAGRAM
MAXIMUM RATINGS
A
(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)
1
2
6
1
Rating
Symbol
Max
50
Unit
Vdc
SOT−363
CASE 419B
36 M G
Collector-Base Voltage
Collector-Emitter Voltage
V
CBO
V
CEO
G
50
Vdc
Collector Current − Continuous
Input Forward Voltage
I
100
40
mAdc
Vdc
C
V
36
M
G
=
=
=
Specific Device Code
Date Code*
Pb-Free Package
IN(fwd)
Input Reverse Voltage
V
IN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MUN5336DW1T1G
SOT−363
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
January, 2014 − Rev. 0
DTC115EP/D