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MUN5333DW1T1

更新时间： 2024-01-16 18:41:02
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
13页 368K
描述
Dual Bias Resistor Transistors

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MUN5333DW1T1 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-70包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.97其他特性：BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.385 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管元件材料：SILICONVCEsat-Max：0.25 V
Base Number Matches：1

MUN5333DW1T1 数据手册

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LESHAN RADIO COMPANY, LTD.  
Dual Bias Resistor Transistors  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
MUN5311DW1T1  
Series  
6
5
4
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-  
sistors are designed to replace a single device and its external resistor bias network. The BRT  
eliminates these individual components by integrating them into a single device. In the  
MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package  
which is ideal for low power surface mount applications where board space is at a premium.  
• Simplifies Circuit Design  
1
2
3
SOT 363  
CASE 419B STYLE1  
• Reduces Board Space  
• Reduces Component Count  
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1  
6
5
4
and Q 2 , – minus sign for Q 1 (PNP) omitted)  
R1  
R2  
Rating  
Symbol Value  
Unit  
Vdc  
Q2  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V CBO  
V CEO  
I C  
50  
50  
R2  
Q1  
Vdc  
R1  
100  
mAdc  
1
2
3
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
(One Junction Heated)  
Total Device Dissipation  
T A = 25°C  
Symbol  
Max  
Unit  
6
5
4
P D  
187 (Note 1.)  
256 (Note 2.)  
1.5 (Note 1.)  
2.0 (Note 2.)  
670 (Note 1.)  
490 (Note 2.)  
mW  
XX  
Derate above 25°C  
mW/°C  
°C/W  
1
2
3
Thermal Resistance –  
Junction-to-Ambient  
R θJA  
xx = Device Marking  
= (See Page 2)  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
DEVICE MARKING  
INFORMATION  
See specific marking information in  
the device marking table on page 2 of  
this data sheet.  
Total Device Dissipation  
T A = 25°C  
P D  
250 (Note 1.)  
385 (Note 2.)  
2.0 (Note 1.)  
3.0 (Note 2.)  
mW  
Derate above 25°C  
mW/°C  
°C/W  
Thermal Resistance –  
Junction-to-Ambient  
Thermal Resistance –  
Junction-to-Lead  
R θJA  
R θJL  
493 (Note 1.)  
325 (Note 2.)  
188 (Note 1.)  
208 (Note 2.)  
°C/W  
Junction and Storage  
Temperature  
T J , T stg  
–55 to +150  
°C  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
MUN5311dw–1/13  
1234567...13

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