生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | unknown | 风险等级: | 5.41 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 8 | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN AND PNP |
功耗环境最大值: | 0.15 W | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | VCEsat-Max: | 0.25 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MUN5331DW1T1G | ONSEMI |
获取价格 |
Dual Bias Resistor Transistors | |
MUN5331DW1T2 | MOTOROLA |
获取价格 |
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR | |
MUN5331DW1T3 | MOTOROLA |
获取价格 |
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN | |
MUN5332DW | WEITRON |
获取价格 |
Dual Bias Resistor Transistor NPNPNP Silicon | |
MUN5332DW1 | ONSEMI |
获取价格 |
Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k | |
MUN5332DW1T1 | ETL |
获取价格 |
Dual Bias Resistor Transistors | |
MUN5332DW1T1 | ONSEMI |
获取价格 |
Dual Bias Resistor Transistors | |
MUN5332DW1T1 | LRC |
获取价格 |
Dual Bias Resistor Transistors | |
MUN5332DW1T1 | MOTOROLA |
获取价格 |
Dual Bias Resistor Transistors | |
MUN5332DW1T1G | ONSEMI |
获取价格 |
Dual Bias Resistor Transistors |