Datasheet > MUN5316DW

MUN5316DW

更新时间： 2024-10-29 12:20:07

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
29页	1490K
描述
Dual Bias Resistor Transistor NPNPNP Silicon

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中文翻译

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数据手册

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MUN5316DW 数据手册

MUN5311DW Series

Dual Bias Resistor Transistor

NPN+PNP Silicon

R₁

R₂

Q₂

R₂

Q₁

P b

Lead(Pb)-Free

R₁

SOT-363(SC-88)

( T =25˚C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted)

Maximum Ratings

Value

Unit

Vdc

Rating

Collector-Emitter Voltage

Symbol

CEO

CBO

Vdc

Collector-Base Voltage

Collector Current-Continuous

mAdc

100

Thermal Characteristics

Characteristics(One Junction Heated)

Symbol

Max

Unit

187(1)

256(2)

1.5(1)

2.0(2)

Total Device Dissipation

TA=25˚C

Derate above 25˚C

mW/˚C

670(1)

490(2)

Thermal Resistance, Junction to Ambient

˚C/W

θJA

Characteristics(Both Junctions Heated)

Symbol

Max

Unit

250(1)

385(2)

2.0(1)

3.0(2)

Total Device Dissipation

TA=25˚C

Derate above 25˚C

mW/ C

493(1)

325(2)

˚C/W

Thermal Resistance, Junction to Ambient

θJA

θJL

188(1)

208(2)

˚C/W

˚C

Thermal Resistance, Junction to Lead

-55 to +150

Junction and Storage, Temperature Range

J,Tstg

1.FR-4 @ minimum pad.

2.FR-4 @ 1.0 x 1.0 inch Pad

Device Marking and Resistor Values

Device

Marking

R1(K)

R2(K)

Device

Marking

R1(K)

R2(K)

MUN5311DW

1.0

2.2

4.7

MUN5330DW

MUN5331DW

MUN5332DW

MUN5333DW

MUN5334DW

MUN5335DW

1.0

MUN5312DW

MUN5313DW

MUN5314DW

MUN5315DW

MUN5316DW

2.2

4.7

2.2

WEITRON

http://www.weitron.com.tw

1/29

Rev.B 20-Jan-09

12 3 4 5 6 7...29

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