Datasheet > MUN5315DW1T1

MUN5315DW1T1

更新时间： 2024-10-28 22:51:03

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管光电二极管
页数	文件大小	规格书
13页	368K
描述
Dual Bias Resistor Transistors

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中文翻译

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数据手册
替代型号

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MUN5315DW1T1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Bias Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

MUN5311DW1T1

Series

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-

sistors are designed to replace a single device and its external resistor bias network. The BRT

eliminates these individual components by integrating them into a single device. In the

MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package

which is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

SOT 363

CASE 419B STYLE1

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1

and Q 2 , – minus sign for Q 1 (PNP) omitted)

R₁

R₂

Rating

Symbol Value

Unit

Vdc

Q₂

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V _CBO

V _CEO

I _C

R₂

Q₁

Vdc

R₁

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

MARKING DIAGRAM

(One Junction Heated)

Total Device Dissipation

T _A= 25°C

Symbol

Max

Unit

P _D

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

Derate above 25°C

mW/°C

°C/W

Thermal Resistance –

Junction-to-Ambient

R _θJA

xx = Device Marking

= (See Page 2)

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

Total Device Dissipation

T _A= 25°C

P _D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Derate above 25°C

mW/°C

°C/W

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R _θJA

R _θJL

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

T _J, T _stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

MUN5311dw–1/13

12 3 4 5 6 7...13

中文翻译

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MUN5315DW1T1 替代型号

型号	品牌	替代类型	描述	数据表
MUN5315DW1T1G	ONSEMI	功能相似	Dual Bias Resistor Transistors
MUN5315DW1T1	ONSEMI	功能相似	Dual Bias Resistor Transistors

与MUN5315DW1T1相关器件

型号	品牌	获取价格	描述	数据表
MUN5315DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5315DW1T2	MOTOROLA	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
MUN5315DW1T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
MUN5316DW	WEITRON	获取价格	Dual Bias Resistor Transistor NPNPNP Silicon
MUN5316DW1T1	ETL	获取价格	Dual Bias Resistor Transistors
MUN5316DW1T1	LRC	获取价格	Dual Bias Resistor Transistors
MUN5316DW1T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5316DW1T1	MOTOROLA	获取价格	Dual Bias Resistor Transistors
MUN5316DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5316DW1T2	MOTOROLA	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR

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