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MUN5312DW PDF预览

MUN5312DW

更新时间: 2024-11-24 12:20:07
品牌 Logo 应用领域
WEITRON 晶体晶体管
页数 文件大小 规格书
29页 1490K
描述
Dual Bias Resistor Transistor NPNPNP Silicon

MUN5312DW 数据手册

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MUN5311DW Series  
6
5
4
6
5
4
Dual Bias Resistor Transistor  
NPN+PNP Silicon  
R1  
R2  
Q2  
1
2
3
R2  
Q1  
P b  
Lead(Pb)-Free  
R1  
SOT-363(SC-88)  
1
2
3
( T =25˚C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted)  
A
Maximum Ratings  
Value  
50  
Unit  
Vdc  
Rating  
Collector-Emitter Voltage  
Symbol  
V
CEO  
CBO  
Vdc  
V
Collector-Base Voltage  
50  
I
C
Collector Current-Continuous  
mAdc  
100  
Thermal Characteristics  
Characteristics(One Junction Heated)  
Symbol  
Max  
Unit  
187(1)  
256(2)  
1.5(1)  
2.0(2)  
Total Device Dissipation  
TA=25˚C  
Derate above 25˚C  
P
mW  
D
mW/˚C  
670(1)  
490(2)  
R
Thermal Resistance, Junction to Ambient  
˚C/W  
θJA  
Characteristics(Both Junctions Heated)  
Symbol  
Max  
Unit  
250(1)  
385(2)  
2.0(1)  
3.0(2)  
P
D
Total Device Dissipation  
TA=25˚C  
Derate above 25˚C  
mW  
mW/ C  
493(1)  
325(2)  
˚C/W  
R
R
Thermal Resistance, Junction to Ambient  
θJA  
θJL  
188(1)  
208(2)  
˚C/W  
˚C  
Thermal Resistance, Junction to Lead  
T
-55 to +150  
Junction and Storage, Temperature Range  
J,Tstg  
1.FR-4 @ minimum pad.  
2.FR-4 @ 1.0 x 1.0 inch Pad  
Device Marking and Resistor Values  
Device  
Marking  
R1(K)  
R2(K)  
Device  
Marking  
R1(K)  
R2(K)  
10  
22  
47  
10  
10  
MUN5311DW  
11  
10  
1.0  
2.2  
4.7  
4.7  
22  
MUN5330DW  
MUN5331DW  
MUN5332DW  
MUN5333DW  
MUN5334DW  
MUN5335DW  
30  
31  
32  
33  
34  
1.0  
22  
47  
47  
MUN5312DW  
MUN5313DW  
MUN5314DW  
MUN5315DW  
MUN5316DW  
12  
13  
14  
15  
16  
2.2  
4.7  
47  
47  
4.7  
2.2  
35  
47  
WEITRON  
http://www.weitron.com.tw  
1/29  
Rev.B 20-Jan-09  

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