Datasheet > MUN5311DW1

MUN5311DW1

更新时间： 2024-11-25 01:18:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	99K
描述
Complementary Bias Resistor Transistors

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中文翻译

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数据手册

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MUN5311DW1 数据手册

MUN5311DW1,

NSBC114EPDXV6,

NSBC114EPDP6

Complementary Bias

Resistor Transistors

http://onsemi.com

PIN CONNECTIONS

(2)

R1 = 10 kW, R2 = 10 kW

NPN and PNP Transistors with Monolithic

Bias Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base-emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable*

(4)

(5)

(6)

MARKING DIAGRAMS

SOT−363

CASE 419B

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

11 M G

Compliant

MAXIMUM RATINGS

(T = 25°C both polarities Q (PNP) & Q (NPN), unless otherwise noted)

Rating

Symbol

Max

Unit

Vdc

SOT−563

CASE 463A

11 M G

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

Vdc

Collector Current − Continuous

Input Forward Voltage

100

mAdc

Vdc

IN(fwd)

SOT−963

CASE 527AD

Input Reverse Voltage

Vdc

L M G

IN(rev)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

11/L

Specific Device Code

Date Code*

Pb-Free Package

ORDERING INFORMATION

†

Device

Package

Shipping

MUN5311DW1T1G,

SMUN5311DW1T1G*

SOT−363

3,000/Tape & Reel

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

MUN5311DW1T2G,

SMUN5311DW1T2G*

SOT−363

3,000/Tape & Reel

SMUN5311DW1T3G

SOT−363

SOT−563

10,000/Tape & Reel

4,000/Tape & Reel

NSBC114EPDXV6T1G,

NSVBC114EPDXV6T1G*

NSBC114EPDXV6T5G

NSBC114EPDP6T5G

SOT−563

SOT−963

8,000/Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

May, 2014 − Rev. 2

DTC114EP/D

12 3 4 5 6 7...10

中文翻译

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与MUN5311DW1相关器件

型号	品牌	获取价格	描述	数据表
MUN5311DW1T1	LRC	获取价格	Dual Bias Resistor Transistors
MUN5311DW1T1	MOTOROLA	获取价格	Dual Bias Resistor Transistors
MUN5311DW1T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5311DW1T1	ETL	获取价格	Dual Bias Resistor Transistors
MUN5311DW1T1/D	ETC	获取价格	Dual Bias Resistor Transistor
MUN5311DW1T1_05	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5311DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5311DW1T1G_09	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5311DW1T2	MOTOROLA	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
MUN5311DW1T2G	ONSEMI	获取价格	Complementary Bias Resistor Transistors

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