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MMG3007NT1_12 PDF预览

MMG3007NT1_12

更新时间: 2024-09-16 11:44:51
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管
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15页 361K
描述
Heterojunction Bipolar Transistor

MMG3007NT1_12 数据手册

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Document Number: MMG3007NT1  
Rev. 6, 2/2012  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
(InGaP HBT)  
Broadband High Linearity Amplifier  
MMG3007NT1  
The MMG3007NT1 is a general purpose amplifier that is internally  
input and output matched. It is designed for a broad range of Class A,  
small--signal, high linearity, general purpose applications. It is suitable  
for applications with frequencies from 0 to 6000 MHz such as cellular,  
P C S , B WA , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l  
small--signal RF.  
0--6000 MHz, 19 dB  
16 dBm  
Features  
InGaP HBT  
Frequency: 0 to 6000 MHz  
P1dB: 16 dBm @ 900 MHz  
Small--Signal Gain: 19 dB @ 900 MHz  
Third Order Output Intercept Point: 30 dBm @ 900 MHz  
Single 5 Volt Supply  
Internally Matched to 50 Ohms  
Cost--effective SOT--89 Surface Mount Package  
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.  
1
2
3
CASE 1514--02, STYLE 1  
SOT--89  
PLASTIC  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
Characteristic  
Symbol 900 2140 3500 Unit  
MHz MHz  
MHz  
V
7
250  
CC  
CC  
Small--Signal Gain  
(S21)  
G
19  
-- 1 4  
-- 2 0  
16  
16.5  
-- 2 1  
-- 1 7  
15.5  
29  
14  
dB  
dB  
p
Supply Current  
I
mA  
dBm  
°C  
RF Input Power  
P
10  
in  
Input Return Loss  
(S11)  
IRL  
ORL  
P1dB  
OIP3  
-- 2 1  
-- 2 5  
16  
Storage Temperature Range  
T
stg  
--65 to +150  
150  
(2)  
Junction Temperature  
T
J
°C  
Output Return Loss  
(S22)  
dB  
2. For reliable operation, the junction temperature should not  
exceed 150°C.  
Power Output @1dB  
Compression  
dBm  
Third Order Output  
Intercept Point  
30  
28.5 dBm  
1. V = 5 Vdc, T = 25°C, 50 ohm system.  
CC  
A
Table 3. Thermal Characteristics  
(3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
77  
°C/W  
JC  
Case Temperature 86°C, 5 Vdc, 47 mA, no RF applied  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2005--2008, 2012. All rights reserved.  

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