Datasheet > MMG20241HT1

MMG20241HT1

更新时间： 2024-09-15 20:05:03

品牌	Logo	应用领域
恩智浦 - NXP		射频微波
页数	文件大小	规格书
27页	1209K
描述
E-pHEMT GPA/LNA, 450-2800 MHz, 20 dB, 20 dBm

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MMG20241HT1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.33.00.01
风险等级：	5.68	JESD-609代码：	e3
射频/微波设备类型：	WIDE BAND MEDIUM POWER	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

MMG20241HT1 数据手册

Document Number: MMG20241H

Rev. 2, 9/2014

Freescale Semiconductor

Technical Data

Driver or Pre--driver Amplifier

for Doherty Power Amplifiers

MMG20241HT1

GaAs Enhancement Mode pHEMT

The MMG20241H is a 1/4 W high gain amplifier designed as a driver or

pre--driver for Doherty power amplifiers in wireless infrastructure equipment

operating in the 450 to 3800 MHz frequency range. Because of its versatile

design, the device may also be used in a variety of general purpose amplifier

applications, including frequencies below 450 MHz and above 3800 MHz.

450–3800 MHz, 17.8 dB @ 2655 MHz

24.5 dBm

DRIVER AMPLIFIER

Features



P1dB: 24 dBm @ 2655 MHz

Gain: 17.8 dB @ 2655 MHz

Designed as a Doherty PA Driver or Pre--driver

5 V Single Supply, 78 mA Current

SOT--89 Package

50 Ohm Operation with Minimal External Matching

In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

SOT--89

Table 1. Typical Performance ⁽¹⁾

Characteristic

Symbol

1915 MHz 2140 MHz 2350 MHz 2595 MHz 2655 MHz 3700 MHz

Unit

Small--Signal Gain (S21)

Power Output @ 1dB Compression

Third Order Output Intercept Point

Input Return Loss (S11)

19.5

24.5

17.5

17.8

23.9

14.7

24.1

38.1

–17

–15

1.9

P1dB

OIP3

IRL

24.5

34.9

–19

–11

1.9

23.8

34.9

–12

–18

1.9

dBm

37.5

–14

2.2

–24

–13

–14

–16

2.1

Output Return Loss (S22)

Noise Figure

ORL

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

130

dBm

C

Supply Current

RF Input Power

Storage Temperature Range

Junction Temperature

stg

–65 to +150

175

C

Table 3. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



C/W

Case Temperature 88C, 5 Vdc, 85 mA, no RF applied

1. V = 5 Vdc, T = 25C, 50 ohm system, application circuit tuned for specified frequency.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes -- AN1955.

MMG20241HT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...27

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