5秒后页面跳转
MMG25H120XT6TC PDF预览

MMG25H120XT6TC

更新时间: 2024-09-16 17:15:31
品牌 Logo 应用领域
宏微 - MACMIC 双极性晶体管
页数 文件大小 规格书
7页 1010K
描述
IGBT 模块

MMG25H120XT6TC 数据手册

 浏览型号MMG25H120XT6TC的Datasheet PDF文件第2页浏览型号MMG25H120XT6TC的Datasheet PDF文件第3页浏览型号MMG25H120XT6TC的Datasheet PDF文件第4页浏览型号MMG25H120XT6TC的Datasheet PDF文件第5页浏览型号MMG25H120XT6TC的Datasheet PDF文件第6页浏览型号MMG25H120XT6TC的Datasheet PDF文件第7页 
MMG25H120XT6TC  
1200V 25A Rectifier+Inverter Module  
June 2020  
Preliminary  
RoHS Compliant  
PRODUCT FEATURES  
Substrate for Low Thermal Resistance  
Low saturation voltage and positive temperature coefficient  
Fast switching and short tail current  
Free wheeling diodes with fast and soft reverse recovery  
Solder Contact Technology, Rugged mounting due to integrated  
Mounting clamps  
Temperature sense included  
APPLICATIONS  
AC motor control  
Motion/servo control  
Inverter and power supplies  
Rectifier+Inverter  
IGBT-inverter  
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)  
Symbol  
VCES  
Parameter/Test Conditions  
Values  
1200  
Unit  
V
TJ=25  
Collector Emitter Voltage  
Gate Emitter Voltage  
VGES  
±20  
39  
TC=25, TJmax=175℃  
IC  
DC Collector Current  
TC=100, TJmax=175℃  
tp=1ms  
25  
A
ICM  
Ptot  
Repetitive Peak Collector Current  
Power Dissipation Per IGBT  
50  
TC=25, TJmax=175℃  
157  
W
Diode-inverter  
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)  
Symbol  
VRRM  
Parameter/Test Conditions  
Values  
1200  
Unit  
V
TJ=25℃  
Repetitive Reverse Voltage  
Average Forward Current  
IF(AV)  
IFRM  
I2t  
25  
50  
A
Repetitive Peak Forward Current  
tp=1ms  
A2S  
TJ =125, t=10ms, VR=0V  
110  
MacMic Science & Technology Co., Ltd.  
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China  
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com  
1

与MMG25H120XT6TC相关器件

型号 品牌 获取价格 描述 数据表
MMG25HD120XB6TC MACMIC

获取价格

IGBT 模块
MMG25HD120XT6TC MACMIC

获取价格

IGBT 模块
MMG3001NT1 FREESCALE

获取价格

Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3001NT1 NXP

获取价格

40MHz - 3600MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE
MMG3001NT1_08 FREESCALE

获取价格

Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3001NT1_12 FREESCALE

获取价格

Heterojunction Bipolar Transistor
MMG3002N NXP

获取价格

InGaP HBT GPA, 40-3600 MHz, 20 dB, 21 dBm
MMG3002NT1 FREESCALE

获取价格

Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3002NT1 MOTOROLA

获取价格

Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3002NT1_08 FREESCALE

获取价格

Heterojunction Bipolar Transistor Technology (InGaP HBT)