Datasheet > MMG3003N

MMG3003N

更新时间： 2024-11-19 15:19:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	634K
描述
InGaP HBT GPA, 40-3600 MHz, 20 dB, 24 dBm

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MMG3003N 数据手册

Document Number: MMG3003NT1

Rev. 9, 9/2014

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

MMG3003NT1

Broadband High Linearity Amplifier

The MMG3003NT1 is a general purpose amplifier that is internally input

matched and internally output prematched. It is designed for a broad range

of Class A, small--signal, high linearity, general purpose applications. It is

suitable for applications with frequencies from 40 to 3600 MHz such as

cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general

small--signal RF.

40--3600 MHz, 20 dB

24 dBm

InGaP HBT GPA

Features



Frequency: 40--3600 MHz

P1dB: 24 dBm @ 900 MHz

Small--Signal Gain: 20 dB @ 900 MHz

Third Order Output Intercept Point: 40.5 dBm @ 900 MHz

Single Voltage Supply

Internally Matched to 50 Ohms

Cost--effective SOT--89 Surface Mount Plastic Package

In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

SOT--89

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

900

2140 3500

MHz Unit

Characteristic

Symbol MHz MHz

400

Small--Signal Gain

(S21)

20 16.9

Supply Current

dBm

C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1dB

OIP3

-- 1 5 --14.1 -- 11 . 2

Storage Temperature Range

Junction Temperature

stg

--65 to +150

175

C

Output Return Loss

(S22)

-- 9 . 3

--14.5 --10.2

Power Output @1dB

Compression

23.3

20.5 dBm

Third Order Output

Intercept Point

40.5

dBm

1. V = 6.2 Vdc, T = 25C, 50 ohm system.

Table 3. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

C/W

Thermal Resistance, Junction to Case



31.6

Case Temperature 109C, 6.2 Vdc, 180 mA, no RF applied

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMG3003NT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...17

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与MMG3003N相关器件

型号	品牌	获取价格	描述	数据表
MMG3003NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifie
MMG3003NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3003NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology
MMG3004N	NXP	获取价格	InGaP HBT GPA, 400-2200 MHz, 17 dB, 27 dBm
MMG3004NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3004NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3005NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3005NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3006N	NXP	获取价格	InGaP HBT GPA, 400-2400 MHz, 17.5 dB, 33 dBm
MMG3006NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)

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