Document Number: MMG3006NT1
Rev. 2, 3/2008
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMG3006NT1
Broadband High Linearity Amplifier
The MMG3006NT1 is a General Purpose Amplifier that is internally in-
put prematched and designed for a broad range of Class A, small-signal,
high linearity, general purpose applications. It is suitable for applications
with frequencies from 400 to 2400 MHz such as Cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small-signal RF.
400-2400 MHz, 17.5 dB
33 dBm
InGaP HBT
Features
• Frequency: 400-2400 MHz
• P1dB: 33 dBm @ 900 MHz
• Small-Signal Gain: 17.5 dB @ 900 MHz
• Third Order Output Intercept Point: 49 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Input Prematched to 50 Ohms
• RoHS Compliant
CASE 1898-01
QFN 4x4
PLASTIC
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 13 inch Reel.
Table 1. Typical Performance (1)
Table 2. Maximum Ratings
Characteristic
Symbol 900 1960 2140 Unit
Rating
Supply Voltage
Symbol
Value
Unit
V
MHz MHz
MHz
V
6
1400
DC
DC
Small-Signal Gain
(S21)
G
17.5
14
14
dB
dB
p
Supply Current
I
mA
dBm
°C
RF Input Power
P
28
in
Input Return Loss
(S11)
IRL
ORL
P1db
IP3
-8
-9
-12
-18
33
Storage Temperature Range
T
stg
-65 to +150
150
(2)
Junction Temperature
T
°C
Output Return Loss
(S22)
-13
33
-14
33
49
dB
J
2. For reliable operation, the junction temperature should not
exceed 150°C.
Power Output @1dB
Compression
dBm
dBm
Third Order Output
Intercept Point
49
49
1. V = 5 Vdc, T = 25°C, 50 ohm system
DC
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 850 mA, T = 25°C)
DC
DC
C
(3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
7.8
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
MMG3006NT1
RF Device Data
Freescale Semiconductor
1