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MMG3006NT1

更新时间: 2024-11-18 05:49:23
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管
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24页 464K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT)

MMG3006NT1 数据手册

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Document Number: MMG3006NT1  
Rev. 2, 3/2008  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
Technology (InGaP HBT)  
MMG3006NT1  
Broadband High Linearity Amplifier  
The MMG3006NT1 is a General Purpose Amplifier that is internally in-  
put prematched and designed for a broad range of Class A, small-signal,  
high linearity, general purpose applications. It is suitable for applications  
with frequencies from 400 to 2400 MHz such as Cellular, PCS, WLL, PHS,  
VHF, UHF, UMTS and general small-signal RF.  
400-2400 MHz, 17.5 dB  
33 dBm  
InGaP HBT  
Features  
Frequency: 400-2400 MHz  
P1dB: 33 dBm @ 900 MHz  
Small-Signal Gain: 17.5 dB @ 900 MHz  
Third Order Output Intercept Point: 49 dBm @ 900 MHz  
Single 5 Volt Supply  
Internally Input Prematched to 50 Ohms  
RoHS Compliant  
CASE 1898-01  
QFN 4x4  
PLASTIC  
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 13 inch Reel.  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Characteristic  
Symbol 900 1960 2140 Unit  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
MHz MHz  
MHz  
V
6
1400  
DC  
DC  
Small-Signal Gain  
(S21)  
G
17.5  
14  
14  
dB  
dB  
p
Supply Current  
I
mA  
dBm  
°C  
RF Input Power  
P
28  
in  
Input Return Loss  
(S11)  
IRL  
ORL  
P1db  
IP3  
-8  
-9  
-12  
-18  
33  
Storage Temperature Range  
T
stg  
-65 to +150  
150  
(2)  
Junction Temperature  
T
°C  
Output Return Loss  
(S22)  
-13  
33  
-14  
33  
49  
dB  
J
2. For reliable operation, the junction temperature should not  
exceed 150°C.  
Power Output @1dB  
Compression  
dBm  
dBm  
Third Order Output  
Intercept Point  
49  
49  
1. V = 5 Vdc, T = 25°C, 50 ohm system  
DC  
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 850 mA, T = 25°C)  
DC  
DC  
C
(3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
JC  
7.8  
°C/W  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2008. All rights reserved.  

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