Datasheet > MMG3004N

MMG3004N

更新时间： 2024-11-19 15:18:55

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
21页	455K
描述
InGaP HBT GPA, 400-2200 MHz, 17 dB, 27 dBm

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MMG3004N 数据手册

Document Number: MMG3004NT1

Rev. 9, 10/2014

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

MMG3004NT1

Broadband High Linearity Amplifier

The MMG3004NT1 is a general purpose amplifier that is internally

prematched and designed for a broad range of Class A, small--signal, high

linearity, general purpose applications. It is suitable for applications with

frequencies from 400 to 2200 MHz such as cellular, PCS, WLL, PHS,

VHF, UHF, UMTS and general small--signal RF.

400--2200 MHz, 17 dB

27 dBm

Features

InGaP HBT GPA



Frequency: 400--2200 MHz

P1dB: 27 dBm @ 2140 MHz

Small--Signal Gain: 17 dB @ 2140 MHz

Third Order Output Intercept Point: 44 dBm @ 2140 MHz

Single 5 V Supply

Internally Prematched to 50 Ohms

In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel.

PQFN 5  5

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

900

1960 2140

MHz Unit

Characteristic

Symbol MHz MHz

400

Small--Signal Gain

(S21)

19.5

-- 7 . 5

-- 1 0

16.5

Supply Current

dBm

C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1dB

OIP3

-- 8

Storage Temperature Range

Junction Temperature

stg

--65 to +150

150

C

Output Return Loss

(S22)

-- 1 2

Power Output @ 1dB

Compression

dBm

Third Order Output

Intercept Point

1. V = 5 Vdc, T = 25C, 50 ohm system, application circuit

tuned for specified frequency.

Table 3. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

C/W

Thermal Resistance, Junction to Case



23.2

Case Temperature 90C, 5 Vdc, 260 mA, no RF applied

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMG3004NT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...21

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与MMG3004N相关器件

型号	品牌	获取价格	描述	数据表
MMG3004NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3004NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3005NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3005NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3006N	NXP	获取价格	InGaP HBT GPA, 400-2400 MHz, 17.5 dB, 33 dBm
MMG3006NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3006NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3007NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor (InGaP HBT)
MMG3007NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor (InGaP HBT)
MMG3007NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor

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