Datasheet > MMG3003NT1

MMG3003NT1

更新时间： 2024-11-18 02:59:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体放大器晶体管射频微波功率放大器
页数	文件大小	规格书
16页	323K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMG3003NT1 数据手册

Document Number: MMG3003NT1

Rev. 4, 5/2006

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

MMG3003NT1

Broadband High Linearity Amplifier

The MMG3003NT1 is a General Purpose Amplifier that is internally

input matched and internally output prematched. It is designed for a broad

range of Class A, small-signal, high linearity, general purpose applica-

tions. It is suitable for applications with frequencies from 40 to 3600 MHz

such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and

general small-signal RF.

40-3600 MHz, 20 dB

24 dBm

Features

InGaP HBT

• Frequency: 40-3600 MHz

• P1dB: 24 dBm @ 900 MHz

• Small-Signal Gain: 20 dB @ 900 MHz

• Third Order Output Intercept Point: 40.5 dBm @ 900 MHz

• Single Voltage Supply

• Internally Matched to 50 Ohms

• Low Cost SOT-89 Surface Mount Package

• RoHS Compliant

CASE 1514-01, STYLE 1

SOT-89

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

PLASTIC

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Characteristic

Symbol 900 2140 3500 Unit

Rating

Symbol

Value

Unit

MHz MHz

MHz

(2)

Supply Voltage

400

Small-Signal Gain

(S21)

20 16.9

(2)

Supply Current

RF Input Power

dBm

°C

Input Return Loss

(S11)

IRL

ORL

P1db

IP3

-15 -14.1 -11.2

Storage Temperature Range

stg

-65 to +150

150

(3)

Output Return Loss

(S22)

-9.3 −14.5 -10.2

Junction Temperature

°C

2. Voltage and current applied to device.

3. For reliable operation, the junction temperature should not

Power Output @1dB

Compression

23.3

20.5 dBm

37 dBm

exceed 150°C.

Third Order Output

Intercept Point

40.5

1. V = 6.2 Vdc, T = 25°C, 50 ohm system

Table 3. Thermal Characteristics (V = 6.2 Vdc, I = 180 mA, T = 25°C)

(4)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

31.6

°C/W

4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MMG3003NT1

Freescale Semiconductor

RF Product Device Data

6-1

12 3 4 5 6 7...16

中文翻译

下载PDF

与MMG3003NT1相关器件

型号	品牌	获取价格	描述	数据表
MMG3003NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3003NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology
MMG3004N	NXP	获取价格	InGaP HBT GPA, 400-2200 MHz, 17 dB, 27 dBm
MMG3004NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3004NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3005NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3005NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3006N	NXP	获取价格	InGaP HBT GPA, 400-2400 MHz, 17.5 dB, 33 dBm
MMG3006NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3006NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)

与MMG3003NT1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

MMG3003NT1

MMG3003NT1 数据手册

与MMG3003NT1相关器件

与MMG3003NT1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMG3003NT1

MMG3003NT1 数据手册

与MMG3003NT1相关器件

与MMG3003NT1相关文章

您还可以找

您在本页遇到什么问题？