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MMG3001NT1

更新时间： 2024-11-20 03:48:59
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飞思卡尔 - FREESCALE 晶体晶体管射频微波
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15页 291K
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Heterojunction Bipolar Transistor Technology (InGaP HBT)

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Document Number: MMG3001NT1  
Rev. 6, 7/2007  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
Technology (InGaP HBT)  
Broadband High Linearity Amplifier  
MMG3001NT1  
The MMG3001NT1 is a General Purpose Amplifier that is internally  
input and output matched. It is designed for a broad range of Class A,  
small-signal, high linearity, general purpose applications. It is suitable for  
applications with frequencies from 40 to 3600 MHz such as Cellular, PCS,  
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.  
40-3600 MHz, 20 dB  
18.5 dBm  
Features  
InGaP HBT  
• Frequency: 40-3600 MHz  
• P1dB: 18.5 dBm @ 900 MHz  
• Small-Signal Gain: 20 dB @ 900 MHz  
• Third Order Output Intercept Point: 32 dBm @ 900 MHz  
• Single Voltage Supply  
• Internally Matched to 50 Ohms  
• Low Cost SOT-89 Surface Mount Package  
• RoHS Compliant  
1
2
3
CASE 1514-02, STYLE 1  
SOT-89  
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.  
PLASTIC  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Characteristic  
Symbol 900 2140 3500 Unit  
MHz MHz MHz  
Rating  
Symbol  
Value  
Unit  
V
(2)  
Supply Voltage  
V
7
300  
CC  
CC  
Small-Signal Gain  
(S21)  
G
20  
18  
16  
dB  
dB  
dB  
p
(2)  
Supply Current  
RF Input Power  
I
mA  
dBm  
°C  
P
10  
in  
Input Return Loss  
(S11)  
IRL  
-25  
-22  
-25  
-18  
-19  
-17  
Storage Temperature Range  
T
stg  
-65 to +150  
150  
(3)  
Junction Temperature  
T
°C  
Output Return Loss  
(S22)  
ORL  
J
2. Voltage and current applied to device.  
3. For reliable operation, the junction temperature should not  
Power Output @1dB  
Compression  
P1db  
IP3  
18.5  
32  
18  
31  
15.5 dBm  
28.5 dBm  
exceed 150°C.  
Third Order Output  
Intercept Point  
1. V = 5.6 Vdc, T = 25°C, 50 ohm system  
CC  
C
Table 3. Thermal Characteristics (V = 5.6 Vdc, I = 58 mA, T = 25°C)  
CC  
CC  
C
(4)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
JC  
92.0  
°C/W  
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2004-2007. All rights reserved.  
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