Datasheet > MMG2401NR2

MMG2401NR2

更新时间： 2024-11-18 03:48:59

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		放大器功率放大器 WLAN 无线局域网
页数	文件大小	规格书
12页	172K
描述
Indium Gallium Phosphorus HBT - WLAN Power Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMG2401NR2 数据手册

Document Number: MMG2401

Rev. 3, 5/2006

Freescale Semiconductor

Technical Data

Indium Gallium Phosphorus HBT

WLAN Power Amplifier

Designed for 802.11g and dual mode applications with frequencies from

2400 to 2500 MHz.

MMG2401NR2

• 26.5 dBm P1dB @ 2450 MHz

• Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB)

• High Gain, High Efficiency and High Linearity

• EVM = 3% Typ @ P_out= +19 dBM, 14% PAE

• RoHS Compliant

2400-2500 MHz, 27.5 dB, 26.5 dBm

802.11g WLAN POWER AMPLIFIER

InGaP HBT

• In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel.

CASE 1483-01

QFN 3x3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Collector Supply

Base Supply First Stage

Base Supply Second Stage

Detector Bias Supply

DC Current

BIAS

171

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

°C/W

°C

(1)

Thermal Resistance, Junction to Case

Case Operating Temperature Range

Storage Temperature Range

185

- 40 to +85

stg

- 55 to +150

°C

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

Machine Model (per EIA/JESD22-A115)

Charge Device Model (per JESD22-C101)

2 (Minimum)

A (Minimum)

II (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Per JESD 22-A113, IPC/JEDEC J-STD-020

1. Simulated.

Rating

Package Peak Temperature

Unit

260

°C

MMG2401NR2

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

下载PDF

与MMG2401NR2相关器件

型号	品牌	获取价格	描述	数据表
MMG2401R2	NXP	获取价格	2400MHz - 2500MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 3 X 3 MM, CASE 1483- 01
MMG25CE120XB6TC	MACMIC	获取价格	IGBT 模块
MMG25H120XB6TC	MACMIC	获取价格	IGBT 模块
MMG25H120XT6TC	MACMIC	获取价格	IGBT 模块
MMG25HD120XB6TC	MACMIC	获取价格	IGBT 模块
MMG25HD120XT6TC	MACMIC	获取价格	IGBT 模块
MMG3001NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3001NT1	NXP	获取价格	40MHz - 3600MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE
MMG3001NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3001NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor