Datasheet > MMG20271H

MMG20271H

更新时间： 2024-11-21 17:01:55

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
18页	471K
描述
E-pHEMT GPA/LNA, 1500-2700 MHz, 16 dB, 27.5 dBm

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MMG20271H 数据手册

Document Number: MMG20271H

Rev. 1, 9/2014

Freescale Semiconductor

Technical Data

Enhancement Mode pHEMT

Technology (E--pHEMT)

MMG20271HT1

High Linearity Amplifier

The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed

in a QFN 3  3 standard plastic package. It is ideal for Cellular, PCS, LTE,

TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the

1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can

be utilized as a driver amplifier in the transmit chain and as a second stage LNA

in the receive chain.

1500--2700 MHz, 16 dB

27.5 dBm

E--pHEMT LNA/GPA

Features



Frequency: 1500--2700 MHz

Noise Figure: 1.7 dB @ 2140 MHz

P1dB: 27.5 dBm @ 2140 MHz

Small--Signal Gain: 16 dB @ 2140 MHz

Third Order Output Intercept Point: 42 dBm @ 2140 MHz

Single 5 V Supply

Supply Current: 180 mA

50 Ohm Operation (some external matching required)

Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package

In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

QFN 3  3

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

1500 2140 2700

Symbol MHz MHz MHz Unit

Characteristic

400

Noise Figure

2.0

1.7

1.9

Supply Current

dBm

C

Input Return Loss

(S11)

IRL

-- 1 6

-- 1 4

-- 1 7

RF Input Power

Storage Temperature Range

Junction Temperature

stg

--65 to +150

175

Output Return Loss

(S22)

ORL

-- 2 0

-- 2 2

-- 1 7

C

Small--Signal Gain

(S21)

Power Output @

1dB Compression

P1db

IIP3

27.5

dBm

Third Order Input

Intercept Point

Third Order Output

Intercept Point

OIP3

1. V = 5 Vdc, T = 25C, 50 ohm system, application circuit

tuned for specified frequency.

Table 3. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

C/W

Thermal Resistance, Junction to Case



Case Temperature 96C, 5 Vdc, 190 mA, no RF applied

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMG20271HT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...18

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