Datasheet > 晶体管 > 功率场效应晶体管> MMFT5P03HDT3

MMFT5P03HDT3

更新时间： 2024-02-09 02:33:20

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关光电二极管局域网
页数	文件大小	规格书
12页	201K
描述
TMOS P-CHANNEL FIELD FEECT TRANSISTOR

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中文翻译

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技术参数
数据手册
替代型号

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MMFT5P03HDT3 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.68	配置：	Single
最大漏极电流 (Abs) (ID)：	3.7 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1.56 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

MMFT5P03HDT3 数据手册

Order this document

by MMFT5P03HD/D

SEMICONDUCTOR TECHNICAL DATA

Medium Power Surface Mount Products

Motorola Preferred Device

TMOS MEDIUM

POWER FET

5.2 AMPERES

30 VOLTS

MMFT5P03HD is an advanced power MOSFET which utilizes

Motorola’s High Cell Density HDTMOS process. This miniature

surface mount MOSFET features ultra low R

and true logic

DS(on)

level performance. It is capable of withstanding high energy in the

avalanche and commutation modes and the drain–to–source diode

has a very low reverse recovery time. MMFT5P03HD devices are

designed for use in low voltage, high speed switching applications

where power efficiency is important. Typical applications are dc–dc

converters, and power management in portable and battery

powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor

controls in mass storage products such as disk drives and tape

drives. The avalanche energy is specified to eliminate the

guesswork in designs where inductive loads are switched and offer

additional safety margin against unexpected voltage transients.

= 100 mΩ

DS(on)

2, 4

CASE 318E–04, Style 3

TO–261AA

•

Ultra Low R

Battery Life

Provides Higher Efficiency and Extends

DS(on)

•

Logic Level Gate Drive — Can Be Driven by Logic ICs

Miniature SOT–223 Surface Mount Package — Saves Board

Space

•

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

Specified at Elevated Temperature

DSS

Avalanche Energy Specified

DEVICE MARKING

ORDERING INFORMATION

Device

Reel Size

Tape Width

12 mm embossed tape

Quantity

5P03H

MMFT5P03HDT3

13″

4000 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International

Rectifier. Thermal Clad is a trademark of the Bergquist Company.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1997

12 3 4 5 6 7...12

中文翻译

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MMFT5P03HDT3 替代型号

型号	品牌	替代类型	描述	数据表
NTF5P03T3G	ONSEMI	功能相似	Power MOSFET 5.2 A, 30 V
NTF5P03T3	ONSEMI	功能相似	Power MOSFET
MMFT5P03HDT3	ONSEMI	功能相似	Power MOSFET 5 Amps, 30 Volts

与MMFT5P03HDT3相关器件

型号	品牌	获取价格	描述	数据表
MMFT60R115PC	MGCHIP	获取价格	600V 0.115(ohm) N-channel MOSFET
MMFT60R115PCTH	MGCHIP	获取价格	600V 0.115(ohm) N-channel MOSFET
MMFT60R190QTH	MGCHIP	获取价格	TO-220FT
MMFT60R195P	MGCHIP	获取价格	600V 0.195(ohm) N-channel MOSFET
MMFT60R195PC	MGCHIP	获取价格	600V 0.195(ohm) N-channel MOSFET
MMFT60R195PCTH	MGCHIP	获取价格	600V 0.195(ohm) N-channel MOSFET
MMFT60R195PTH	MGCHIP	获取价格	600V 0.195(ohm) N-channel MOSFET
MMFT60R280QTH	MGCHIP	获取价格	TO-220FT
MMFT60R290P	MGCHIP	获取价格	600V 0.29(ohm) N-channel MOSFET
MMFT60R290PC	MGCHIP	获取价格	600V 0.29(ohm) N-channel MOSFET

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