5秒后页面跳转
MMDT4146_1 PDF预览

MMDT4146_1

更新时间: 2024-09-22 03:48:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
5页 80K
描述
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMDT4146_1 数据手册

 浏览型号MMDT4146_1的Datasheet PDF文件第2页浏览型号MMDT4146_1的Datasheet PDF文件第3页浏览型号MMDT4146_1的Datasheet PDF文件第4页浏览型号MMDT4146_1的Datasheet PDF文件第5页 
SPICE MODEL: MMDT4146  
MMDT4146  
COMPLEMENTARY NPN / PNP  
SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
A
·
·
·
·
·
·
Complementary Pair  
SOT-363  
B1  
E1  
C2  
One 4124-Type NPN, One 4126-Type PNP  
Epitaxial Planar Die Construction  
Dim  
A
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
C
B
Ideal for Medium Power Amplification and Switching  
Ultra-Small Surface Mount Package  
B
C1  
E2  
B2  
C
Lead Free/RoHS Compliant (Note 3)  
G
H
D
0.65 Nominal  
F
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
K
J
M
H
Mechanical Data  
J
·
Case: SOT-363  
L
D
F
K
0.90  
0.25  
0.10  
0°  
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
L
E1, B1, C1 = PNP4126 Section  
E2, B2, C2 = NPN4124 Section  
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
M
Terminals: Solderable per MIL-STD-202, Method 208  
a
Lead Free Plating (Matte Tin Finish annealed  
over Alloy 42).  
All Dimensions in mm  
C2  
B1  
E1  
·
·
·
·
Terminal Connections: See Diagram  
Marking (See Page 3): K12  
Ordering & Date Code Information: See Pages 2 & 3  
Weight: 0.006 grams (approx.)  
E2  
B2  
C1  
@ TA = 25°C unless otherwise specified  
Maximum Ratings, NPN 4124 Section  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
NPN 4124 Section  
Unit  
V
30  
25  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
5.0  
200  
200  
625  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1, 2)  
Thermal Resistance, Junction to Ambient (Note 1)  
mA  
mW  
°C/W  
Pd  
RqJA  
@ TA = 25°C unless otherwise specified  
Maximum Ratings, PNP 4126 Section  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
PNP 4126 Section  
Unit  
V
-25  
-25  
-4  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1, 2)  
Thermal Resistance, Junction to Ambient (Note 1)  
-200  
200  
625  
mA  
mW  
°C/W  
Pd  
RqJA  
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Maximum combined dissipation.  
3. No purposefully added lead.  
DS30162 Rev. 9 - 2  
1 of 5  
MMDT4146  
www.diodes.com  
ã Diodes Incorporated  

与MMDT4146_1相关器件

型号 品牌 获取价格 描述 数据表
MMDT4146-7 DIODES

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
MMDT4146-7-F DIODES

获取价格

COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4401 MCC

获取价格

NPN Plastic-Encapsulate Transistors
MMDT4401 BL Galaxy Electrical

获取价格

Dual NPN Small Signal Surface Mount Transistor
MMDT4401 DIODES

获取价格

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4401 TRSYS

获取价格

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4401 SECOS

获取价格

Multi-Chip Transistor
MMDT4401 PANJIT

获取价格

DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR
MMDT4401 CJ

获取价格

SOT-363
MMDT4401 LGE

获取价格

双极型晶体管