Datasheet > MMDT4401

MMDT4401

更新时间： 2024-09-22 14:55:19

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	770K
描述
双极型晶体管

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中文翻译

获取价格

技术参数
数据手册

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MMDT4401 技术参数

极性：	NPN×2	Collector-emitter breakdown voltage：	40
Collector Current - Continuous：	0.6	DC current gain - Min：	100
DC current gain - Max：	300	Transition frequency：	250
Package：	SOT-363	Storage Temperature Range：	-55-150
class：	Transistors

MMDT4401 数据手册

MMDT4401

SOT-363 Dual Transistor (NPN)

SOT-363

Features

Epitaxial Planar Die Construction

Ideal for Low Power Amplification and Switching

MRKING:K2X

Maximum Ratings (TA = 25℃ unless otherwise specified)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Units

Dimensions in inches and (millimeters)

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

0.6

0.2

625

P_C

R_θJA

T_J

Thermal Resistance. Junction to Ambient Air

Junction Temperature

℃/W

℃

150

Storage Temperature

T_stg

-55 to +150

℃

NPN 4401 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 100 μA, I_E=0

I_C= 1mA, I_B=0

I_E= 100 μA, I_C=0

V_CB= 50 V , I_E=0

0.1

0.5

0.1

μA

Collector cut-off current

I_CEO

V_CE= 35 V , I_B=0

Emitter cut-off current

I_EBO

V_EB= 5V , I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

h_FE(5)

V_CE(sat)1

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

f_T

V_CE= 1V, I_C= 0.1mA

V_CE= 1V, I_C= 1mA

V_CE= 1V, I_C= 10mA

V_CE= 1V, I_C= 150mA

V_CE= 2V, I_C= 500mA

I_C=150 mA, I_B= 15mA

I_C=500 mA, I_B= 50mA

I_C= 150 mA, I_B= 15mA

I_C= 500 mA, I_B= 50mA

V_CE= 10V,I_C= 20mA,f=100MHz

V_CB=5V, I_E= 0,f=1MHz

DC current gain

100

300

0.4

0.75

0.95

1.2

Collector-emitter saturation voltage

Base-emitter saturation voltage

0.75

250

Transition frequency

Output Capacitance

Delay time

MHz

C_ob

6.5

t_d

V_CC=30V,

_BE=2V,I_C=150mA ,I_B1=15mA

Rise time

t_r

Storage time

Fall time

t_S

225

V_CC=30V, I_C=150mA,I_B1=-I_B2=15mA

t_f

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Revision:20170701-P1

mail:lge@lgesemi.com

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