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MMDT4403 PDF预览

MMDT4403

更新时间: 2024-11-14 10:51:55
品牌 Logo 应用领域
SECOS 晶体晶体管开关光电二极管
页数 文件大小 规格书
2页 220K
描述
Multi-Chip Transistor

MMDT4403 数据手册

 浏览型号MMDT4403的Datasheet PDF文件第2页 
MMDT4403  
PNP Silicon  
Multi-Chip Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
SOT-363  
* Features  
8o  
.055(1.40)  
.047(1.20)  
o
0
.026TYP  
(0.65TYP)  
.021REF  
(0.525)REF  
Power dissipation.  
PCM : 0.2 W (Temp.=25OC)  
.053(1.35)  
.045(1.15)  
.096(2.45)  
.085(2.15)  
Collector current  
.018(0.46)  
.010(0.26)  
ICM : - 0.6 A  
.014(0.35)  
.006(0.15)  
.006(0.15)  
.003(0.08)  
C2  
B1  
E 1  
Collector -base voltage  
.087(2.20)  
.079(2.00)  
.004(0.10)  
.000(0.00)  
V(BR) CBO : - 40 V  
.043(1.10)  
.035(0.90)  
.039(1.00)  
.035(0.90)  
Operating & storage junction temperature  
E 2  
B2  
C1  
Tj, Tstg : -55OC ~ +150OC  
Marking : K2T  
Dimensions in inches and (millimeters)  
ELECTRICAL CHARACTERISTICS˄Tamb=25ćꢀunless otherwise specified˅  
Parameter  
Symbol  
Test  
conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO Ic=-100µA , IE=0  
-40  
-40  
-5  
V
V
V(BR)CEO IC= -1mA ,  
V(BR)EBO IE=-100µA,  
IB=0  
IC=0  
V
ICBO  
ICEO  
VCB=-50 V , IE=0  
VCE=-35 V , IB=0  
-0.1  
-0.1  
-0.1  
µA  
µA  
µA  
Collector cut-off current  
Emitter cut-off current  
IEBO  
VEB=-5V ,  
IC=0  
hFE(1)  
hFE(2)  
hFE(3)  
hFE(4)  
hFE(5)  
VCE=-1 V, IC= -0.1mA  
VCE=-1 V, IC= -1mA  
VCE=-1 V, IC= -10mA  
VCE=-2 V, IC= -150mA  
VCE=-2 V, IC= -500mA  
30  
60  
DC current gain  
100  
100  
20  
300  
VCE(sat)1 IC=-150 mA, IB=-15mA  
VCE(sat)2 IC=-500 mA, IB=-50mA  
VBE(sat)1 IC= -150 mA, IB=-15mA  
VBE(sat)2 IC= -500 mA, IB=-50mA  
-0.4  
-0.75  
-0.95  
-1.3  
V
V
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
-0.75  
200  
VCE= -10V, IC= -20mA  
Transition frequency  
Output Capacitance  
f T  
MHz  
pF  
f = 100MHz  
VCB=-10V, IE= 0  
Cob  
8.5  
f=1MHz  
Delay time  
Rise time  
Storage time  
Fall time  
td  
15  
20  
nS  
nS  
nS  
nS  
VCC=-30V, VBE=-2V  
tr  
IC=-150mA , IB1=-15mA  
tS  
225  
30  
VCC=-30V, IC=-150mA  
tf  
IB1= IB2= -15mA  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jan-2006 Rev.B  
Page 1 of 2  

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