Datasheet > MMDT4413

MMDT4413

更新时间： 2024-11-15 17:01:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	489K
描述
40V,0.6A,General Purpose NPN+PNP Bipolar Transistor

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MMDT4413 数据手册

NPN/PNP General Purpose Transistor

MMDT4413

Features



Epitaxial planar die construction

Two internal isolated NPN/PNP transistors in one package

Ultra-small surface mount package

Mechanical Data



Case: SOT-363

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-363

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

MMDT4413

SOT-363

3000 pcs / Tape & Reel

K13

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

NPN

PNP

-40

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-5

Collector Current (Continuous)

Collector Current (Peak)

0.6

1.2

-0.6

-1.2

I_CM

Thermal Characteristics

Parameter

Symbol

P_D

Value

0.2

Unit

Power Dissipation ^*1

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Air ^*2

Thermal Resistance Junction-to-Case ^*2

Thermal Resistance Junction-to-Lead ^*2

Operating Junction Temperature

Storage Temperature Range

R_θJA

R_θJC

R_θJL

T_J

625

°C/W

°C

350

250

300

-55 ~ +150

T_STG

°C

STM0113A: March 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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