Datasheet > MMDT4944

MMDT4944

更新时间： 2024-11-14 10:51:55

品牌	Logo	应用领域
SECOS		晶体晶体管
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2页	581K
描述
Dual-Chip Plastic Encapsulated Transistor

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MMDT4944 数据手册

MMDT4944

NPN+NPN

Dual-Chip Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-353

FEATURES

Small package (dual type)

High voltage and high current

High h_FE, Excellent h_FElinearity

PACKAGING INFORMATION

Weight: 0.0081g (approximate)

D G

Millimeter

REF.

MARKING CODE

Min.

Max.

2.20

2.45

1.35

1.10

1.40

0.35

Min.

0.100 REF.

0.525 REF.

0.08 0.15

Max.

2.00

2.15

1.15

0.90

1.20

0.15

LGR

8°

0.650 TYP.

ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

SYMBOL

V_CBO

RATINGS

UNIT

V_CEO

V_EBO

0.15

Collector Current – Continuous

Collector Power Dissipation

Junction, Storage Temperature

I_C

0.20

T_J, T_STG

+150, -55 ~ +150

℃

ELECTRICAL CHARACTERISTICS ^{(at Ta = 25°C unless otherwise specified)}

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

TEST CONDITIONS

SYMBOL MIN. TYP. MAX.

UNIT

I_C= 100 µA, I_E= 0

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 1 mA, I_B= 0

I_E= 100 μA, I_C= 0

V_CB= 60 V, I_E= 0

0.1

0.25

400

μA

Emitter Cutoff Current

V_EB= 5 V, I_C= 0

I_EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

I_C= 100 mA, I_B= 10 mA

V_CE= 6V, I_C= 2 mA

V_CE= 10 V, I_C= 1 mA

V_CB= 10 V, I_E= 0, f = 1 MHz

V_CE(sat)

h_FE

120

f_T

MHz

Output Capacitance

C_OB

3.5

CLASSIFICATION OF h_FE

Marking

Rank

LGR

Range

120 - 240

200 – 400

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-June-2005 Rev. A

Page 1 of 2

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