MMDT5110W~MMDT511ZW-AH
PNP Silicon Epitaxial Planar Digital Transistos
Collector
(Output)
Features
R1
Base
(Input)
• AEC-Q101 Qualified
R2
• Halogen and Antimony Free(HAF),
RoHS compliant
Emitter
(Common)
Resistance Values
Type
R1 (KΩ)
47
R2 (KΩ)
Type
R1 (KΩ)
47
R2 (KΩ)
10
MMDT5110W
MMDT5111W
MMDT5112W
MMDT5113W
MMDT5114W
MMDT5115W
MMDT5116W
MMDT5117W
MMDT5119W
-
MMDT511DW
MMDT511EW
MMDT511FW
MMDT511HW
MMDT511LW
MMDT511MW
MMDT511NW
MMDT511TW
MMDT511VW
MMDT511ZW
10
10
22
47
47
-
47
22
22
4.7
2.2
4.7
2.2
4.7
22
10
47
10
10
4.7
47
10
4.7
22
-
47
-
47
1
10
2.2
4.7
2.2
22
Absolute Maximum Ratings (Ta = 25
Parameter
)
Symbol
-VCBO
-VCEO
-IC
Value
50
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Collector Current
50
V
100
200
150
mA
mW
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Ptot
Tj
Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJA
Max.
625
Unit
/W
Thermal Resistance from Junction to Ambient 1)
1)
Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
®
Dated: 13/10/2022 Rev:03
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