MMDT5110W…MMDT511ZW
PNP Silicon Epitaxial Planar Digital Transistor
Collector
(Output)
R1
Base
(Input)
R2
Emitter
(Common)
Resistance Values
Type
R1 (KΩ)
47
R2 (KΩ)
Type
R1 (KΩ)
47
R2 (KΩ)
10
MMDT5110W
MMDT5111W
MMDT5112W
MMDT5113W
MMDT5114W
MMDT5115W
MMDT5116W
MMDT5117W
MMDT5118W
MMDT5119W
-
10
22
47
47
-
MMDT511DW
MMDT511EW
MMDT511FW
MMDT511HW
MMDT511LW
MMDT511MW
MMDT511NW
MMDT511TW
MMDT511VW
MMDT511ZW
10
47
22
22
4.7
2.2
4.7
2.2
4.7
22
10
47
10
10
4.7
47
10
4.7
22
-
47
-
47
0.51
1
5.1
10
2.2
4.7
2.2
22
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
-VCBO
-VCEO
-IC
Value
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Collector Current
50
50
V
100
mA
mW
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Ptot
200
O
C
Tj
150
O
C
TS
- 55 to + 150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/06/2007